Abstract
SrVO3 films have been deposited on quartz substrates using radiofrequency (RF) sputtering technique. Ag− ions have been implanted with three fluences: 1 × 1015 ions/cm2, 3 × 1015 ions/cm2, and 5 × 1015 ions/cm2. The glancing-angle x-ray diffraction (GIXRD) results exhibited a decrease in the peak intensity; however, the results ruled out the possibility of other secondary phase formation upon increasing the Ag− ion fluence. Field emission scanning electron microscopy (FESEM) results revealed that Ag implantation has sputtered the surface layer and created rough/emptied films. Significant broadening/splitting of V L2 near-edge x-ray absorption fine structure (NEXAFS) spectra convey the incorporation of Ag 4d states in the energy band structure of SrVO3 and electronic transitions from V 2p1/2 states to the Ag-related states. O K-edge spectra have ruled out the charge transfer of O 1s orbits to the Ag states, even upon increasing the Ag concentration, and nullified the formation of AgO types of secondary phases.
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Acknowledgments
Aditya Sharma is thankful to IUAC, New Delhi, India, for providing 90 keV Ag− ion beam from the low-energy ion beam facility (LIEBF) under the BTR proposal scheme (number 65520). Hyun-Joon Shin would like to acknowledge the support from the National Research Foundation of Korea (NRF- 2015R1A5A1009962).
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Sharma, A., Devi, K.D., Varshney, M. et al. Structural, Surface, and Electronic Structure Properties of Ag− Ion-Implanted SrVO3 Thin Films. J. Electron. Mater. 51, 1900–1904 (2022). https://doi.org/10.1007/s11664-022-09454-5
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DOI: https://doi.org/10.1007/s11664-022-09454-5