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Effect of Ag Additives on the Consumption of a Cathode Cu Pad in a Cu/Sn3.5Ag/Cu Flip-Chip Structure Under Electromigration

  • Electronic Packaging and Interconnections 2021
  • Published:
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Abstract

The present work investigated the effect of Ag additives on the consumption of cathode Cu pad under electromigration in a current-stressed Cu/Sn3.5Ag/Cu flip-chip structure. The consumption rate of a cathode Cu pad in a pure Sn system is faster than that of a cathode Cu pad in a Sn3.5Ag system at 80℃ by a factor of 10. Using the kinetics of the consumption equation, the activation energy in the consumption of a cathode Cu pad was calculated. The activation energy (0.65 eV) of the consumption of a cathode Cu pad in a Cu/Sn3.5Ag/Cu flip-chip structure under electromigration (EM) is slightly greater than that (0.62 eV) of the consumption of a cathode Cu pad in a Cu/Sn/Cu flip-chip structure under EM. The dissolution of Cu flux is discussed, and the possible effect of Ag additives on the consumption rate of a cathode Cu pad under EM is proposed. The Ag additives reduced the deficiency of Cu solubility in a solder matrix near the cathode Cu/solder interface, which is the main factor in the reduction of Cu pad consumption. Moreover, the Ag3Sn phase forming on the cathode Cu6Sn5 interface protects Cu6Sn5 from dissolving into the Sn3.5Ag solder matrix under EM.

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Acknowledgments

This work was supported in part by the program MOST 109-2218-E-008-004, MOST 108-2221-E-008-045-MY3, and MOST 107-2221-E-008-042-MY3.

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Authors and Affiliations

  1. Department of Chemical Engineering and Materials Engineering, National Central University, Zhong-Li, 32001, Taiwan

    Y. X. Lin, J. Y. Wang, C. Y. Chen, C. Y. Wu, C. Y. Chiu, C. H. Lee, C. Y. Yeh, B. R. Huang, J. S. Chang, T. H. Yen, K. L. Fu & C. Y. Liu

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  1. Y. X. Lin
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Lin, Y.X., Wang, J.Y., Chen, C.Y. et al. Effect of Ag Additives on the Consumption of a Cathode Cu Pad in a Cu/Sn3.5Ag/Cu Flip-Chip Structure Under Electromigration. J. Electron. Mater. 50, 6584–6589 (2021). https://doi.org/10.1007/s11664-021-09234-7

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  • DOI: https://doi.org/10.1007/s11664-021-09234-7

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