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Anisotropic Optoelectronic Properties of MAPbI3 on (100), (112) and (001) Facets

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A Correction to this article was published on 27 November 2021

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Abstract

Large-size single crystals of MAPbI3 were grown using inverse temperature crystallization. The crystalline anisotropy is important for understanding, designing and controlling the growth and properties of MAPbI3 series materials. The optoelectronic performances using MAPbI3 crystals with three different orientations of (100), (112) and (001) were studied, which revealed the anisotropic optoelectronic properties. The responsivity of the (112) facet of MAPbI3 reaches 7.08 mA/W which shows excellent optoelectronic properties.

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Acknowledgments

The work was financially supported by the National Natural Science Foundation of China (12004289) and the Hubei Provincial Department of Education (Q20201512).

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Authors and Affiliations

  1. Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, No. 206 Guanggu 1st Road, Wuhan, 430205, China

    Bo Chen, Yuchen Bai, Hong Tao, Qiuming Fu, Liwei Xiong, Jun Weng, Shenggao Wang & Hongyang Zhao

  2. Middle School Attached to Huazhong University of Science and Technology, Wuhan, 430074, China

    Yibo Han

  3. College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao, 266590, China

    Jianxu Ding

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  1. Bo Chen
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  2. Yuchen Bai
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  10. Jianxu Ding
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Correspondence to Hongyang Zhao or Jianxu Ding.

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Bo Chen and Yuchen Bai are co-first authors.

The original online version of this article was revised: In the Experimental Section, second paragraph, the crystals were completely stirred at 60°C.

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Chen, B., Bai, Y., Tao, H. et al. Anisotropic Optoelectronic Properties of MAPbI3 on (100), (112) and (001) Facets. J. Electron. Mater. 50, 6881–6887 (2021). https://doi.org/10.1007/s11664-021-09216-9

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  • DOI: https://doi.org/10.1007/s11664-021-09216-9

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