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A Superjunction MOSFET with Ultralow Reverse Recovery Charge and Low Switching Losses

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Abstract

High reverse recovery charge (QRR) and high switching losses have become the main factors that constrain the performance and application area of a superjunction MOSFET (SJ-MOSFET). To reduce QRR and switching losses, an SJ-MOSFET with p-type Schottky diode and source field-plate is proposed and investigated. The p-type Schottky diode consists of Schottky contact and p-base, which is reverse series-connected with body p–n junction diode. The source field-plate is formed by implementing a polysilicon field-plate electrically coupled to the source, which is on the top of an n-pillar. During the reverse conduction state, the p-type Schottky diode is reverse biased, which dramatically suppresses minority carriers injecting into the drift region. Simultaneously, an electron accumulation layer formed under the source field-plate, which provides a path for the reverse current. Consequently, compared with the conventional SJ-MOSFET (Conv-SJ-MOSFET), the proposed SJ-MOSFET achieves an 84.0% lower QRR with almost no sacrifice in other characteristics. Moreover, with reduced gate area, the proposed device also exhibits 47.4% and 66.0% lower gate charge (QG) and gate to drain charge (QGD), respectively. The significantly reduced QG, QGD, and QRR contribute to an overall improvement in switching losses and result in a decrease of over 54.8% in total power losses with operation frequency higher than 50 kHz, demonstrating great potential of the proposed SJ-MOSFET used in power conversion systems.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (No. 51877030), Stable Support Project (No. JCKY201924C002), and Key Laboratory Fund (No. 61426050102).

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Authors and Affiliations

  1. University of Electronic Science and Technology of China, Chengdu, China

    Yun Xia, Wanjun Chen, Ruize Sun, Zhaoji Li & Bo Zhang

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  1. Yun Xia
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  2. Wanjun Chen
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  3. Ruize Sun
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  5. Bo Zhang
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Correspondence to Wanjun Chen.

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Xia, Y., Chen, W., Sun, R. et al. A Superjunction MOSFET with Ultralow Reverse Recovery Charge and Low Switching Losses. J. Electron. Mater. 50, 6297–6306 (2021). https://doi.org/10.1007/s11664-021-09142-w

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  • DOI: https://doi.org/10.1007/s11664-021-09142-w

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