Abstract
In order to understand the current conduction mechanism in metal-semiconductor rectifier junctions, it is important to take electrical measurements depending on the sample temperature. Therefore, the current-voltage (I-V) measurements of the Au/Au-RGO/p-Si/Al structure were taken in the temperature range of 80–300 K by steps of 20 K. In the fabrication of the Au/Au-RGO/p-Si/Al structure, p-type Si was used as a base material. First, an ohmic contact was made by evaporating Al metal on the polished surface of the chemically cleaned p-Si and annealing in a nitrogen atmosphere at 580°C. Afterwards, mercaptoundecanoic acid-capped Au nanoparticles assembled on reduced graphene oxide (RGO), namely Au-RGO nanocomposite, was grown as an interfacial layer on the p-Si semiconductor substrate by the spin coating technique. The morphological and optical properties of the Au-RGO nanocomposite thin film were examined by atomic force microscopy (AFM) and Raman spectroscopy measurements. The I-V measurements of the Au/Au-RGO/p-Si/Al structure were taken depending on sample temperature and the basic electrical parameters such as ideality factor (n), barrier height (Φb) and dynamic resistance were calculated by means of thermionic emission method. It was observed that the ideality factor decreased and the barrier height increased with increasing sample temperature. The results were interpreted with the barrier inhomogeneity model and using Richardson plots.
Similar content being viewed by others
References
S.S. Li, Semiconductor Physical Electronics, 2nd ed., (New York: Springer, 2006).
S.M. Sze, Physics of Semiconductor Devices, 2nd ed., (New York: Wiley, 1981).
U.K. Mishra, and J. Singh, Semiconductor Device Physics and Design (Netherlands: Springer, 2008).
K. Hess, Advanced Theory of Semiconductor Devices (New York: Wiley, 2000).
E.H. Rhoderick, and R.H. Williams, Metal-Semiconductor Contacts, 2nd ed., (Oxford: Clerandon, 1988).
J.H. Werner, and H.H. Güttler, J. Appl. Phys. 73, 1315 (1993).
J.H. Werner, and H.H. Güttler, J. Appl. Phys. 69, 1522 (1991).
M. Sağlam, A. Ateş, M.A. Yıldırım, B. Güzeldir, and A. Astam, Curr. Appl. Phys. 10, 513 (2010).
A.S. Kavasoğlu, F. Yakuphanoğlu, N. Kavasoğlu, O. Pakma, Ö. Birgi, and Ş Oktik, J. Alloys Compd. 492, 421 (2010).
S. Zeyrek, M.M. Bülbül, Ş Altındal, M.C. Baykul, and H. Yüzer, Braz. J. Phys. 38, 591 (2008).
İ Dökme, Microelectron. Reliab. 51, 360 (2011).
A. Türüt, D.E. Yıldız, A. Karabulut, and İ Orak, J. Mater. Sci.: Mater. Electron. 4, 7839 (2020).
İ Orak, Z. Çaldiran, M. Bakir, O. Çifçi, and A. Koçyiğit, J. Electron. Mater. 49, 402 (2020).
A. Karabulut, İ Orak, M. Çağlar, and A. Türüt, Surf. Rev. Lett. 26, 1950045 (2019).
K. Ejderha, İ Orak, S. Duman, and A. Türüt, J. Electron. Mater. 47, 3502 (2018).
A. Kocyigit, İ Orak, Z. Çaldıran, and A. Türüt, J. Mater. Sci.: Mater. Electron. 28, 17177 (2017).
G. Turgut, S. Duman, and F.Ş Özcelik, Metall. and Mater. Trans. A. 48A, 3137 (2017).
A. Güzel, S. Duman, N. Yıldırım, and A. Türüt, J. Electron. Mater. 45, 2808 (2016).
A.F. Özdemir, Z. Kotan, D.A. Aldemir, and Ş Altındal, Eur. Phys. J. Appl. Phys. 46, 20402 (2009).
G. Cebisli, S. Asubay, and Y.S. Ocak, J. Ovonic Res. 14, 405 (2018).
B. Güzeldir, M. Sağlam, and A. Ateş, J. Alloys Compd. 506, 388 (2010).
D.A. Aldemir, A. Kökce, and A.F. Özdemir, Microelectron. Eng. 98, 6 (2012).
T. Göksu, N. Yıldırım, H. Korkut, A.F. Özdemir, A. Türüt, and A. Kökçe, Microelectron. Eng. 87, 1781 (2010).
Y.S. Ocak, C. Bozkaplan, H.S. Ahmed, A. Tombak, M.F. Genisel, and S. Asubay, Optik 142, 644 (2017).
A.R. Deniz, Z. Çaldıran, Ö. Metin, K. Meral, and Ş Aydoğan, J. Colloid Interface Sci. 473, 172 (2016).
Ş Karataş, and Z. Kara, Microelectron. Reliab. 51, 2205 (2011).
C. Çoşkun, Ş Aydoğan, and H. Efeoğlu, Semicond. Sci. Technol. 19, 242 (2004).
K. Moraki, S. Bengi, S. Zeyrek, M.M. Bülbül, and Ş Altındal, J. Mater. Sci.: Mater. Electron. 28, 3987 (2017).
H.C. Card, and E.H. Rhoderick, J. Phys. D Appl. Phys. 4, 1589 (1971).
S. Altındal, B. Sarı, H.I. Ünal, and N. Yavaş, J. Appl. Polym. Sci. 113, 2955 (2009).
H.H. Gullu, and D.E. Yildiz, J. Mater. Sci.: Mater. Electron. 30, 19383 (2019).
A. Fritah, L. Dehimi, F. Pezzimenti, A. Saadoune, and B. Abay, J. Electron. Mater. 48, 3692 (2019).
F.E. Cimilli, M. Sağlam, H. Efeoğlu, and A. Türüt, Phys. B 404, 1558 (2009).
S.N. Alam, N. Sharma, and L. Kumar, Graphene 6, 1 (2017).
W. Zhao, M. Fang, F. Wu, H. Wu, L. Wang, and G. Chen, J. Mater. Chem. C 20, 5817 (2010).
D.J. Finn, M. Lotya, G. Cunningham, R.J. Smith, D. McCloskey, J.F. Donegan et al., J. Mater. Chem. C 2, 925 (2014).
P. Sutter, Nat. Mater. 8, 171 (2009).
T.A. Pham, J.S. Kim, and Y.T. Jeong, Colloids Surf., A 384, 543 (2011).
C. Xu, X. Shi, A. Ji, L. Shi, C. Zhou, and Y. Cui, PLoS ONE 10, e0144842 (2015).
F.W. Low, C.W. Lai, and S.B.A. Hamid, Ceram. Int. 41, 5798 (2015).
H. Ahmad, M. Tajdidzadeh, K. Thambiratnam, and M. Yasin, Laser Phys. 28, 066204 (2018).
H.V. Kumar, S.J. Woltornist, and D.H. Adamson, Carbon 98, 491 (2016).
P.C. Ooi, M.A.S.M. Haniff, M.F.M.R. Wee, C.F. Dee, B.T. Goh, M.A. Mohamed, and B.Y. Majlis, Carbon 124, 547 (2017).
M. Brust, M. Walker, D. Bethell, D.J. Schiffrin, and R. Whyman, Journal of the Chemical SocietyChem. Commun. 7, 801 (1994).
A. Jafarizad, A. Aghanejad, M. Sevim, Ö. Metin, J. Barar, Y. Omidi, and D. Ekinci, Chemistry Select 2, 6663 (2017).
N. Bahar, and D. Ekinci, Electrochim. Acta 337, 135844 (2020).
F. Mao, U. Wiklund, A.M. Andersson, and U. Jansson, J. Mater. Sci. 50, 6518 (2015).
S. Amini, H. Kalaantari, J. Garay, A.A. Balandin, and R. Abbaschian, J. Mater. Sci. 46, 6255 (2011).
R. Beams, L.G. Cançado, and L. Novotny, J. Phys.: Condens. Matter 27, 083002 (2015).
Y. Xue, L. Zhu, H. Chen, J. Qu, and L. Dai, Carbon 92, 305 (2015).
A.G. İmer, M. Gülcan, M. Çelebi, A. Tombak, and Y.S. Ocak, J. Mater. Sci.: Mater. Electron. 31, 2111 (2020).
M.H. Rashid, Microelectronic Circuits: Analysis and Design, 2nd ed., (Stamford.: Cengage Learning, 2011).
R. Boylestad, and L. Nashelsky, Electronic Devices and Circuit Theory, 7th ed., (Columbus, Ohio: Prentice Hall, 2000).
A. Karabulut, H. Efeoğlu, and A. Türüt, J. Semicond. 38, 054003 (2017).
Y. Saraç, S.Ş Şener, A. Baltakesmez, B. Güzeldir, and M. Sağlam, J. Alloy. Compd. 824, 153899 (2020).
M. Yıldırım, A. Kocyigit, A. Sarılmaz, and F. Özel, J. Mater. Sci.: Mater. Electron. 30, 332 (2019).
B. Roul, S. Mukundan, G. Chandan, L. Mohan, and S.B. Krupanidhi, AIP Adv. 5, 037130 (2015).
I. Orak, A. Koçyiğit, and A. Türüt, J. Alloys Compd. 691, 873 (2017).
Ş Karataş, Microelectron. Eng. 87, 1935 (2010).
M. Gülnahar, T. Karaçali, and H. Efeoğlu, Electrochim. Acta 168, 41 (2015).
M.E. Aydın, and A. Türüt, Microelectron. Eng. 84, 2875 (2007).
Ç. Bilkan, S. Zeyrek, S.E. San, and Ş Altındal, Mater. Sci. Semicond. Process. 32, 137 (2015).
Ş Altındal, H. Kanbur, D.E. Yıldız, and M. Parlak, Appl. Surf. Sci. 253, 5056 (2007).
M. Benhaliliba, J. Fundam. Appl. Sci. 9, 605 (2017).
S. Ashok, and K. Giewont, IEEE Electron. Device Lett. 6, 462 (1985).
C. Temirci, B. Batı, M. Sağlam, and A. Türüt, Appl. Surf. Sci. 172, 1 (2001).
M. Sağlam, M. Biber, M. Çakar, and A. Türüt, Appl. Surf. Sci. 230, 404 (2004).
S.B.K. Aydın, D.E. Yıldız, H.K. Çavuş, and R. Şahingöz, Bull. Mater. Sci. 37, 1563 (2014).
İH. Taşdemir, O. Vural, and İ Dökme, Philos. Mag. 96, 1684 (2016).
T. Kılıçoğlu, Thin Solid Films 516, 967 (2008).
M. Sağlam, and A. Türüt, J. Appl. Polym. Sci. 101, 2313 (2006).
A. Ateş, M. Sağlam, B. Güzeldir, M.A. Yıldırım, and A. Astam, J. Optoelectron. Adv. Mater. 12, 1466 (2010).
E. Şenarslan, B. Güzeldir, and M. Sağlam, J. Phys. Chem. Solids 146, 109564 (2020).
A. Türüt, N. Yalçın, and M. Sağlam, Solid State Electron. 35, 835 (1992).
S. Mahato, D. Biswas, L.G. Gerling, C. Voz, and J. Puigdollers, AIP Adv. 7, 085313 (2017).
M.A. Yıldırım, B. Güzeldir, A. Ateş, and M. Sağlam, Microelectron. Eng. 88, 3075 (2011).
R.T. Tung, Phys. Rev. B 45, 13509 (1992).
S. Chand, and J. Kumar, Semicond. Sci. Technol. 11, 1203 (1996).
S. Chand, and J. Kumar, Semicond. Sci. Technol. 10, 1680 (1995).
N. Yıldırım, K. Ejderha, and A. Türüt, J. Appl. Phys. 108, 114506 (2010).
J.H. Werner, and H.H. Güttler, J. Appl. Phys. 69, 1522 (1991).
I. Jyothi, H.D. Yang, K.H. Shim, V. Janardhanam, S.M. Kang, H. Hong, and C.J. Choi, Mater. Trans. 54, 1655 (2013).
E. Marıl, Ş Altındal, A. Kaya, S. Koçyiğit, and İ Uslu, Philos. Mag. 95, 1049 (2015).
Author information
Authors and Affiliations
Contributions
MS: Conceptualization, Visualization, Investigation, Writing-review & editing, BG: Conceptualization, Visualization, Investigation, Methodology, AT: Conceptualization, Methodology, Investigation, DE: Methodology, Investigation.
Corresponding author
Ethics declarations
Conflict of interest
On behalf of all authors, the corresponding author states that there is no conflict of interest.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Sağlam, M., Güzeldir, B., Türüt, A. et al. Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature. Journal of Elec Materi 50, 4752–4761 (2021). https://doi.org/10.1007/s11664-021-09017-0
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-021-09017-0