Abstract
Innovative material configurations obtained by incorporating two-dimensional (2D) layers of MoS2 (a two-dimensional material) with Fe doped ZnO (Fe:ZnO) thin films are found to exhibit high thermoelectric properties at lower temperature. The low dimensionality of material (MoS2) is expected to enhance the thermoelectric power factor because of the strong confinement of charge carriers. MoS2 layers have been incorporated in the Fe:ZnO thin film by depositing MoS2 layers over Fe:ZnO thin film and by fabricating the multilayered structure of MoS2 layers with Fe:ZnO. The fabricated structures were characterized for their structural, optical and morphological properties using the available characterization tools. The multilayer configuration of the MoS2 and Fe:ZnO (FZnMFZn) sample was found to exhibit higher values of power factor of 1.06 × 10−3 W/mK2 and figure of merit (ZT) of 3.11 × 10−2 at a very low operating temperature of 300 K. The obtained results highlight the importance of charge confinement in improving the thermoelectric properties of the multilayered structure (FZnMFZn thin film sample) indicating that it is a promising candidate for practical applications.
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The authors are thankful to Department of Science and technology (DST-SERB) and University of Delhi for the financial support for carrying out this research work.
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Gupta, A., Kumar, S., Jindal, K. et al. Enhanced Low Temperature Thermoelectric Properties by Nano-Inclusion of 2D MoS2 with Fe:ZnO Thin Films. Journal of Elec Materi 50, 4567–4576 (2021). https://doi.org/10.1007/s11664-021-08979-5
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DOI: https://doi.org/10.1007/s11664-021-08979-5