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Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire

  • Topical Collection: 62nd Electronic Materials Conference 2020
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Abstract

In this work, the optical properties of thin-film α-Ga2O3 are examined and contrasted with those of β-Ga2O3 thin films grown on similar substrates. Thin films of α-Ga2O3 were synthesized employing mist chemical vapor deposition (mist CVD) on double-side polished c-plane sapphire. Optical properties were studied through absorbance, photoluminescence (PL), and photoluminescence excitation (PLE). Absorbance measurements showed spectra consistent with that previously reported in the literature, with Eg ~ 5.19 eV for α-Ga2O3. Despite an absorption edge laying at higher energies, the PL spectra in α-Ga2O3 films yield similar features to those of metal-organic chemical vapor deposition (MOCVD) grown β-Ga2O3 thin-films. In both cases, when excited above the band gap, the PL spectra consist of UV, UV′, blue and green broad bands. As the excitation photon energy was varied, the relative intensity of these PL bands changed. This is attributed to a non-uniform defect concentration distribution across the sample depth. With smaller concentration of defects associated with blue and green emission in the bulk compared to the surface in the α-phase films.

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Acknowledgement

The authors would like to thank the funding provided by the Air Force Office of Scientific Research under Award No. FA9550-18-1- 0507 (Program Manager: Dr. Ali Sayir).

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT, 84112, USA

    Leila Ghadbeigi, Jacqueline Cooke, Rujun Sun, Praneeth Ranga, Sriram Krishnamoorthy, Michael A. Scarpulla & Berardi Sensale-Rodriguez

  2. School of Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami, Kochi, 782-8502, Japan

    Giang T. Dang, Toshiyuki Kawaharamura & Tatsuya Yasuoka

  3. Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan, Ba Dinh, Hanoi, 118011, Vietnam

    Giang T. Dang

  4. Department of Materials Science and Engineering, The University of Utah, Salt Lake City, UT, 84112, USA

    Michael A. Scarpulla

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  1. Leila Ghadbeigi
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  2. Jacqueline Cooke
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  3. Giang T. Dang
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  4. Toshiyuki Kawaharamura
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Correspondence to Leila Ghadbeigi.

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Ghadbeigi, L., Cooke, J., Dang, G.T. et al. Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire. J. Electron. Mater. 50, 2990–2998 (2021). https://doi.org/10.1007/s11664-021-08809-8

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  • DOI: https://doi.org/10.1007/s11664-021-08809-8

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