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Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2

  • Topical Collection: 62nd Electronic Materials Conference 2020
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Abstract

Continuous-wave laser crystallization of amorphous Si (a-Si) thin films on a polyimide (PI)-coated glass substrate is studied by using a single scan of a highly uniform top-flat line-beam with a 123 nm SiO2 cap layer and a thin buffer layer at room temperature in air. The total buffer layer thickness is reduced to as thin as 1.55  μm including the heatsink a-Si layer and two SiO2 layers. Damage to the polyimide during the crystallization is successfully suppressed by the heatsink layer. An 88.3% {100} surface fraction is obtained for a 60-nm-thick Si thin film within 15° on polyimide even with a low scan velocity of 15 mm/s.

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Authors and Affiliations

  1. Sasaki Consulting, 3-16-4-2007 Nakasaiwaicho, Saiwaiku, Kawasaki, 212-0012, Japan

    Nobuo Sasaki

  2. Nara Institute of Science and Technology, 8916-5 Takayamacho, Ikoma, 630-0192, Japan

    Nobuo Sasaki, Muhammad Arif & Yukiharu Uraoka

  3. V-Technology Co., Ltd., 134 Godocho, Hodogayaku, Yokohama, 240-0005, Japan

    Nobuo Sasaki, Jun Gotoh & Shigeto Sugimoto

Authors
  1. Nobuo Sasaki
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  2. Muhammad Arif
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  3. Yukiharu Uraoka
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  4. Jun Gotoh
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  5. Shigeto Sugimoto
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Correspondence to Nobuo Sasaki.

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Sasaki, N., Arif, M., Uraoka, Y. et al. Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2. J. Electron. Mater. 50, 2974–2980 (2021). https://doi.org/10.1007/s11664-021-08751-9

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