Abstract
A germanium crystal of high purity was grown in H2 with a maximum dislocation density of 3000 cm−2, which was estimated by white beam x-ray topography. Due to a dynamical diffraction effect, the topographs revealed the existence of vacancy clusters in the form of voids in dislocation-free parts of the crystal. Etch pit density analysis, the standard technique employed for crystalline wafers to determine dislocation density, failed to reliably represent dislocations in dislocation-free parts of the crystal. On the other hand, we were able to identify a different type of etching pattern for a dislocation-free crystal. Microwave photoconductance decay was utilized to determine the charge carrier lifetime, which was found to be up to 500 μs for regions with dislocations, while being only 100 μs for dislocation-free parts of the crystal.
References
N. Abgrall, A. Abramov, N. Abrosimov, I. Abt, M. Agostini, M. Agartioglu, A. Ajjaq, S. Alvis, F. Avignone III, X. Bai, M. Balata, I. Barabanov, A.S. Barabash, P.J. Barton, L. Baudis, L. Bezrukov, T. Bode, A. Bolozdynya, D. Borowicz, A. Boston, H. Boston, S.T.P. Boyd, R. Breier, V. Brudanin, R. Brugnera, M. Busch, M. Buuck, A. Caldwell, T.S. Caldwell, T. Camellato, M. Carpenter, C. Cattadori, J. Cederkäll, Y.-D. Chan, S. Chen, A. Chernogorov, C.D. Christofferson, P.-H. Chu, R.J. Cooper, C. Cuesta, E.V. Demidova, Z. Deng, M. Deniz, J.A. Detwiler, N. Di Marco, A. Domula, Q. Du, Yu. Efremenko, V. Egorov, S.R. Elliott, D. Fields, F. Fischer, A. Galindo-Uribarri, A. Gangapshev, A. Garfagnini, T. Gilliss, M. Giordano, G.K. Giovanetti, M. Gold, P. Golubev, C. Gooch, P. Grabmayr, M.P. Green, J. Gruszko, I.S. Guinn, V.E. Guiseppe, V. Gurentsov, Y. Gurov, K. Gusev, J. Hakenmüeller, L. Harkness-Brennan, Z. R. Harvey, C. R. Haufe, L. Hauertmann, D. Heglund, L. Hehn, A. Heinz, R. Hiller, J. Hinton, R. Hodak, W. Hofmann, S. Howard, M.A. Howe, M. Hult, L.V. Inzhechik, J. Janicskó Csáthy, R. Janssens, M. Ješkovský, J. Jochum, H.T. Johansson, D. Judson, M. Junker, J. Kaizer, K. Kang, V. Kazalov, Y. Kermadic, F. Kiessling, A. Kirsch, A. Kish, A. Klimenko, K.T. Knöpfle, O. Kochetov, S.I. Konovalov, I. Kontul, V.N. Kornoukhov, T. Kraetzschmar, K. Kröninger, A. Kumar, V.V. Kuzminov, K. Lang, M. Laubenstein, A. Lazzaro, Y. L. Li, Y.-Y. Li, H.B. Li, S.T. Lin, M. Lindner, I. Lippi, S.K. Liu, X. Liu, J. Liu, D. Loomba, A. Lubashevskiy, B. Lubsandorzhiev, G. Lutter, H. Ma, B. Majorovits, F. Mamedov, R.D. Martin, R. Massarczyk, J.A.J. Matthews, N. McFadden, D.-M. Mei, H. Mei, S.J. Meijer, D. Mengoni, S. Mertens, W. Miller, M. Miloradovic, R. Mingazheva, M. Misiaszek, P. Moseev, J. Myslik, I. Nemchenok, T. Nilsson, P. Nolan, C. O’Shaughnessy, G. Othman, K. Panas, L. Pandola, L. Papp, K. Pelczar, D. Peterson, W. Pettus, A.W.P. Poon, P.P. Povinec, A. Pullia, X.C. Quintana, D.C. Radford, J. Rager, C. Ransom, F. Recchia, A.L. Reine, S. Riboldi, K. Rielage, S. Rozov, N.W. Rouf, E. Rukhadze, N. Rumyantseva, R. Saakyan, E. Sala, F. Salamida, V. Sandukovsky, G. Savard, S. Schönert, A.-K. Schütz, O. Schulz, M. Schuster, B. Schwingenheuer, O. Selivanenko, B. Sevda, B. Shanks, E. Shevchik, M. Shirchenko, F. Simkovic, L. Singh, V. Singh, M. Skorokhvatov, K. Smolek, A. Smolnikov, A. Sonay, M. Spavorova, I. Stekl, D. Stukov, D. Tedeschi, J. Thompson, T. Van Wechel, R.L. Varner, A.A. Vasenko, S. Vasilyev, A. Veresnikova, K. Vetter, K. von Sturm, K. Vorren, M. Wagner, G.-J. Wang, D. Waters, W.-Z. Wei, T. Wester, B.R. White, C. Wiesinger, J.F. Wilkerson, M. Willers, C. Wiseman, M. Wojcik, H.T. Wong, J. Wyenberg, W. Xu, E. Yakushev, G. Yang, C.-H. Yu, Q. Yue, V. Yumatov, J. Zeman, Z. Zeng, I. Zhitnikov, B. Zhu, D. Zinatulina, A. Zschocke, A.J. Zsigmond, K. Zuber, and G. Zuzel, in AIP Conference Proceedings (2017) p. 020027.
E.E. Haller, W.L. Hansen, and F.S. Goulding, Adv. Phys. 30, 93 (1981).
I. Yonenaga, Germanium Crystals: Single Crystals of Electronic Materials (Sawston: Woodhead Publishing, 2019), pp. 89–127.
A.G. Tweet, J. Appl. Phys. 29, 1520 (1958).
J. Vanhellemont, P. Spiewak, and K. Sueoka, J. Appl. Phys. 101, 036103 (2007).
P. Spiewak, K. Sueoka, J. Vanhellemont, K. Kurzydlowski, K. Mlynarczyk, P. Wabinski, and I. Romandic, Physica B 401, 205 (2007).
F. Frank and D. Turnbull, Phys. Rev. 104, 617 (1956).
G. Wang, Y. Guan, H. Mei, D. Mei, G. Yang, J. Govani, and M. Khizar, J. Cryst. Growth 393, 54 (2014).
G. Wang, H. Mei, D. Mei, Y. Guan, and G. Yang, J. Phys. Conf. Ser. 606, 012012 (2015).
N. Abrosimov, M. Czupalla, N. Dropka, J. Fischer, A. Gybin, K. Irmscher, J. Janicsko-Csathy, U. Juda, S. Kayser, and W. Miller, J. Cryst. Growth 532, 125396 (2020).
W. Miller, N. Abrosimov, J. Fischer, A. Gybin, U. Juda, S. Kayser, and J. Janicsko-Csathy, Crystals 10, 18 (2020).
A. Rack, T. Weitkamp, S.B. Trabelsi, P. Modregger, A. Cecilia, T. dos Santos Rolo, T. Rack, D. Haas, R. Simon, and R. Heldele, Nucl. Instrum. Methods Phys. Res. B Beam Interact. Mater. Atoms 267, 978 (2009).
X. Huang, J. Appl. Crystallogr. 43, 926 (2010).
K. Dornich, Ph.D. thesis, TU Bergakademie Freiberg (2006).
G. Beck and M. Kunst, Rev. Sci. Instrum. 57, 197 (1986).
M. Kunst and G. Beck, J. Appl. Phys. 60, 3558 (1986).
K. Lauer, A. Laades, H. Ubensee, H. Metzner, and A. Lawerenz, J. Appl. Phys. 104, 104503 (2008).
W.C. Dash, J. Appl. Phys. 30, 459 (1959).
A. Authier and C. Malgrange, Acta Crystallogr. A Found. Crystallogr. 54, 806 (1998).
A. Authier, International Tables for Crystallography (Dordrecht: Springer, 2006), pp. 626–646.
B.K. Tanner, X-ray diffraction topography, Vol. 84 (Oxford: Pergamon Press, 1976).
P. Penning and D. Polder, Philips Res. Rep 16, 419 (1961).
T. Tuomi, R. Rantamaki, P. McNally, D. Lowney, A. Danilewsky, and P. Becker, J. Phys. D Appl. Phys. 34, A133 (2001).
R.D. Deslattes, E.G. Kessler Jr, S. Owens, D. Black, and A. Henins, J. Phys. D Appl. Phys. 32, A3 (1999).
A. Voloshin, I. Smolskii, V. Kaganer, V. Indenbom, and V. Rozhanskii, Phys. Status Solidi A 130, 61 (1992).
S. Hens, J. Vanhellemont, D. Poelman, P. Clauws, I. Romandic, A. Theuwis, F. Holsteyns, and J. Van Steenbergen, Appl. Phys. Lett. 87, 061915 (2005).
M. Van Sande, L. Van Goethem, L. De Laet, and H. Guislain, Appl. Phys. A 40, 257 (1986).
Acknowledgments
Open Access funding provided by Projekt DEAL. We thank the Karlsruhe Institute of Technology for the beam time at the Karlsruhe Research Accelerator synchrotron for investigation of our samples in the framework of the BIRD contract. We acknowledge the support of the German Federal Ministry for Education and Research (BMBF) within the collaborative project GERDA, under the Grant No.05A17BC1. The authors thank Dr. Uta Juda from the Leibniz-Institut für Kristallzüchtung for the support and help in the EPD analysis.
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Gradwohl, KP., Gybin, A., Janicskó-Csáthy, . et al. Vacancy Clustering in Dislocation-Free High-Purity Germanium. J. Electron. Mater. 49, 5097–5103 (2020). https://doi.org/10.1007/s11664-020-08260-1
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DOI: https://doi.org/10.1007/s11664-020-08260-1
Keywords
- High-purity germanium
- dislocations
- vacancies
- voids
- crystal growth