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Structural and Electrical Properties of Cerium Oxides Doped by Sb3+ and Bi3+ Cations

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Abstract

The addition of low melting point trivalent ions in ceria-based electrolyte systems results in a new composite with better oxygen ion conduction at reduced temperature. The present work discusses the synthesis and characterization of co-doped ceramic electrolyte Ce0.8Sm0.1M0.1O2−δ (M = Bi, Sb) prepared by coprecipitation. This study mainly focuses on the effect of the ionic radius of the dopants on the structural and electrical properties of doped ceria. The structural studies of the samples by X-ray diffraction, field emission scanning electron microscopy and transmission electron microscopy show nanosized particles with a cubic fluorite structure. Raman spectroscopy confirmed the presence of O2− vacancies introduced into the lattice due to the substitution of a large ionic radius of Bi3+ for Ce4+. The electrical survey by electrochemical impedance spectroscopy suggests that the dopant ionic radius has a significant influence on the ionic conductivity and activation energy of the doped ceria. There is an enhancement in conductivity noted for bismuth-co-doped samarium-doped ceria due to the larger ionic radius of the bismuth dopant compared to antimony-co-doped samarium-doped ceria.

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Acknowledgment

We acknowledge STIC Cochin and NIIST Trivandrum for providing characterization facilities. One of the authors (Sandhya K) acknowledges the University of Kerala for Junior Research Fellowship. We are also grateful to SERB- EMR/2016/007450 for their financial support.

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Authors and Affiliations

  1. Department of Physics, Govt. College for Women, University of Kerala, Thiruvananthapuram, India

    K. Sandhya, N. S. Chitra Priya & Deepthi N. Rajendran

  2. Department of Electronics, E.S.P.I.R.T. Industries, Redon, France

    Praveen Thappily

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  1. K. Sandhya
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Correspondence to K. Sandhya.

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Sandhya, K., Chitra Priya, N.S., Rajendran, D.N. et al. Structural and Electrical Properties of Cerium Oxides Doped by Sb3+ and Bi3+ Cations. J. Electron. Mater. 49, 4936–4944 (2020). https://doi.org/10.1007/s11664-020-08220-9

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  • DOI: https://doi.org/10.1007/s11664-020-08220-9

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