Abstract
A Co/phenol red (PR)/n-Si/Al device has been fabricated and its current–voltage (I–V) characteristics measured between 80 K and 460 K. Junction parameters of the device, such as the ideality factor, barrier height, interface state density, and series resistance (Rs), were determined using standard thermionic emission theory, the Cheung function, and the Norde method. The application of these approaches revealed that n varied between 4.66 and 1.70 in the temperature range of 80 K to 460 K, while Φb varied between 0.24 eV and 0.83 eV in the same temperature range. These variations of n and Φb can be attributed to the barrier height inhomogeneity in the device. Although PR is generally used in biological applications such as cell culture, it has been observed that such Co/phenol red/n-Si/Al devices may be critical candidates for use in thermal sensors and photodiode applications due to their photoresponse and low-temperature operation for reverse-bias I–V measurements. Furthermore, PR is an alternative to semiconductor materials commonly used in such applications.
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O.F. Yüksel, N. Tuğluoğlu, F. Çalişkan, and M. Yildirim, Mater. Today Proc. 3, 1271 (2016).
X. Zhang, B. Wang, W. Huang, G. Wang, W. Zhu, Z. Wang, W. Zhang, A. Facchetti, and T.J. Marks, Nano Lett. 19, 471 (2019).
K. Li and B. Liu, Chem. Soc. Rev. 43, 6570 (2014).
J. Moreau, U. Giovanella, J. Bombenger, W. Porzio, V. Vohra, L. Spadacini, and G. Di Silvestro, L. Barba, G. Arrighetti, S. Destri, and M. Pasini, ChemPhysChem 10, 647 (2009).
O. Cicek, O.T. Serhat, H. Tecımer, and S. Altındal, J. Electron. Mater. 47, 12 (2018).
S. Aydogan, M. Saglam, and A. Turut, Polymer 46, 563 (2005).
S. Aydogan, M. Saglam, and A. Turut, Polymer 46, 6148 (2005).
S.S. Demirezen, Z. Sönmez, U. Aydemir, and S. Altindal, Curr. Appl. Phys. 12, 266 (2012).
N. ŞimŞir, H. Şafak, O.F. Yüksel, and M. KuŞ, Curr. Appl. Phys. 12, 1510 (2012).
U. Saha and K.K. Mukherjea, RSC Adv. 5, 94462 (2015).
A. Mills and G.A. Skinner, Analyst 136, 894 (2011).
N. Alebachew, O.P. Yadav, and Lokesh, Sci. Int. 5, 7 (2017).
H.A.M. Ali, M.M. El-Nahass, and E.F.M. El-Zaidia, Opt. Laser Technol. 107, 402 (2018).
V. Ganesh, M. Shkir, K. Maurya, I. Yahia, and S. Al Faify, J. Mater. Res. 33, 2364 (2018).
F.-L. Luo, Z.-H. Liu, T.-L. Chen, and B.-L. Gong, Chin. J. Chem. 24, 341 (2006).
E.H. Rhoderick, Metal–Semiconductor Contacts (Oxford: Clarendon, 1978).
H.C. Card and E.G. Rhoderick, J. Phys. D 4, 1589 (1971).
S. Aydogan, M. Saglam, and A. Turut, Microelectron. Eng. 85, 278 (2008).
K. Çınar, Z. Caldiran, C. Coskun, and S. Aydogan, Thin Solid Films 550, 40 (2014).
V.R. Reddy, Thin Solid Films 556, 300 (2014).
R. Anitha, S.S. Menon, G. Bhalerao, P. Siddham, K. Baskar, and S. Singh, J. Appl. Polym. Sci. (2020). https://doi.org/10.1002/App.48952.
O. Pakma, Ş. Çavdar, H. Koralay, N. Tuğluoğlu, and Ö.F. Yüksel, Physica B 527, 1 (2017).
H.M. Zeyada, A.A. Habashi, M.M. Makhlouf, A.S. Behairy, and M.A. Nasher, Microelectron. Eng. 163, 134 (2016).
O. Gullu, S. Aydogan, and A. Turut, Semicond. Sci. Technol. 23, 075005 (2008).
R.T. Tung, Phys. Rev. B 45, 13509 (1992).
R.T. Tung, Mater. Sci. Eng. R. 35, 1 (2001).
J.H. Werner and H.H. Gőttler, J. Appl. Phys. 69, 1522 (1991).
Y. Li, W. Long, and R.T. Tung, Appl. Surf. Sci. 284, 720 (2013).
H. Dogan and S. Elagoz, Phys. E Low Dimens. Syst. Nanostruct. 63, 186 (2014).
S.M. Tunhuma, F.D. Auret, M.J. Legodi, and M. Diale, Phys. B Condens. Matter 480, 201 (2016).
Ş. Aydoğan, M. Sağlam, A. Türüt, and Y. Onganer, Synth. Met. 150, 15 (2005).
H. Kacus, Y. Sahin, S. Aydogan, U. Incekara, and M. Yilmaz, J. Sandw. Struct. Mater. (2020). https://doi.org/10.1177/1099636220909946.
S.K. Cheung and N.W. Cheung, Appl. Phys. Lett. 49, 85 (1986).
O.F. Yüksel, N. Tuğluoğlu, B. Gülveren, H. Şafak, and M. KuŞ, J. Alloys Compd. 577, 30 (2013).
S. Aydogan, M. Saglam, and A. Turut, Appl. Surf. Sci. 250, 43 (2005).
S. Karataş, M. Çakar, and A. Türüt, Mater. Sci. Semicond. Process 28, 135 (2014).
H. Norde, J. Appl. Phys. 50, 5052 (1979).
O. Tüzün and E. Yaglıoglu, Mater. Sci. Semicond. Process. 26, 448 (2014).
S. Karatas, S. Altindal, A. Turut, and A. Ozmen, Appl. Surf. Sci. 217, 250 (2003).
H. Altuntas, S. Altindal, S. Ozcelik, and H. Shtrikman, Vacuum 83, 1060 (2009).
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Sahin, Y., Kacus, H., Aydogan, S. et al. Enhanced Electrical and Optical Characteristics of Co/Phenol Red (PR)/Silicon Hybrid Heterojunction for Photodiode and Thermal Applications. J. Electron. Mater. 49, 4952–4961 (2020). https://doi.org/10.1007/s11664-020-08217-4
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DOI: https://doi.org/10.1007/s11664-020-08217-4