Abstract
Minority-carrier lifetimes and diffusion lengths have been deduced from a comparison of band structure simulations and experimental measurements on mid-wave infrared InAsSb XBn and long-wave infrared InAs/GaSb type II superlattice (T2SL) XBp barrier detectors with low diffusion-limited dark current close to mercury cadmium telluride Rule 07 and high quantum efficiency. For the XBn devices, a lifetime of 1.9 μs was observed with a corresponding diffusion length of 14.5 μm. In contrast, the T2SL exhibited a much shorter lifetime of 7.5 ns, but the diffusion length of ∼ 7 μm was long enough to ensure that almost 90% of the photocarriers are collected. The lifetime appears to be Auger limited in the case of n-type InAsSb, but for the p-type T2SL, Shockley–Read–Hall (SRH) traps appear to dominate. In the second case, possible scenarios for the dominance of SRH recombination are discussed to identify pathways for further performance optimization.
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Acknowledgments
The authors acknowledge technical support from Mr. S. Greenberg, who was responsible for the smooth operation of the MBE machine, and Ms. H Schanzer, Mr. Hanan Geva, Ms. H. Moshe, Mr. Y. Caracenti, Ms. N. Hazan, Mr. I. Bogoslavski, Mr. Y. Osmo, Ms. L Krivolapov, and Ms. M. Menahem who all contributed to the successful processing, packaging, or characterization of the materials and devices. We are grateful to Mr. Y. Livneh for computational assistance with the k·p simulations.
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Klipstein, P.C., Benny, Y., Cohen, Y. et al. Performance Limits of III–V Barrier Detectors. J. Electron. Mater. 49, 6893–6899 (2020). https://doi.org/10.1007/s11664-020-08195-7
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DOI: https://doi.org/10.1007/s11664-020-08195-7