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p-Type Nonpolar a-ZnO:N Thin Films on r-Sapphire Substrates Grown by Molecular Beam Epitaxy

  • Topical Collection: 19th International Conference on II-VI Compounds
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Abstract

We have grown nonpolar nitrogen (N) doped a-plane zinc oxide (ZnO) films on r-plane sapphire substrates in order to eliminate the self-polarization component in the growth direction, which decreases the doping efficiency of N acceptors. Nonpolar a-ZnO:N films were grown by plasma-assisted molecular beam epitaxy (PA-MBE) using Zn metal and a plasma source of O2 and NO mixed gas. It was confirmed by reflection high-energy electron diffraction and x-ray diffraction that single phase a-plane ZnO:N films were grown on the r-plane sapphire substrates. After the PA-MBE growth, the post-annealing was performed in an oxygen atmosphere. Photoluminescence experiments showed donor–acceptor pair emissions increase with increasing the annealing temperature (≤ 700°C). AC magnetic field Hall effect measurements revealed that n-type conduction of the as-grown films clearly changed to the p-type at the annealing temperature of 650°C. The resistivity, hole concentration, and mobility were ρ = 3.4 Ω cm, p = 8.0 × 1017 cm−3, and μ = 2.3 cm2/Vs, respectively.

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References

  1. A. Tsukazaki, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat. Mater. 4, 42 (2005).

    Article  CAS  Google Scholar 

  2. S.J. Jiao, Z.Z. Zhang, Y.M. Lu, D.Z. Shen, B. Yao, J.Y. Zhang, B.H. Li, D.X. Zhao, X.W. Fan, and Z.K. Tang, Appl. Phys. Lett. 88, 031911 (2006).

    Article  Google Scholar 

  3. K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S.F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, Appl. Phys. Lett. 97, 013501 (2010).

    Article  Google Scholar 

  4. C.X. Shan, J.S. Liu, Y.J. Lu, B.H. Li, F.C.C. Ling, and D.Z. Shen, Opt. Lett. 40, 3041 (2015).

    Article  CAS  Google Scholar 

  5. C.H. Park, S.B. Zhang, and S.-H. Wei, Phys. Rev. B 66, 073202 (2002).

    Article  Google Scholar 

  6. Y. Yan and S.-H. Wei, Phys. Status Solidi B 245, 641 (2008).

    Article  CAS  Google Scholar 

  7. X. Xie, B. Li, Z. Zhang, S. Wang, and D. Shen, Sci. Rep. 8, 17020 (2018).

    Article  Google Scholar 

  8. J. Zuniga-Perez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S.F. Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M.R. Wagner, J.S. Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, and G. Feuillet, Appl. Phys. Rev. 3, 041303 (2016).

    Article  Google Scholar 

  9. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 70, 2822 (1997).

    Article  CAS  Google Scholar 

  10. S.K. Han, K. Hana, S.K. Honga, J.W. Leeb, J.Y. Leeb, J.H. Songc, Y.S. Namd, S.K. Changd, T. Minegishie, and T. Yao, J. Cryst. Growth 309, 121 (2007).

    Article  CAS  Google Scholar 

  11. P. Pant, J.D. Budai, and J. Narayan, Acta Mater. 58, 1097 (2010).

    Article  CAS  Google Scholar 

  12. H.G. Chen, G.J. Chen, S.R. Jian, G.Z. Huang, and J.W. Ni, Int. J. Modern Phys. B 23, 1154 (2009).

    Article  CAS  Google Scholar 

  13. M. Kadota and T. Miura, Jpn. J. Appl. Phys. 41, 3281 (2002).

    Article  CAS  Google Scholar 

  14. S. Liang, C.R. Gorla, N. Emanetoglu, Y. Liu, W.E. Mayo, and Y. Lu, J. Electron. Material. 27, L72 (1998).

    Article  CAS  Google Scholar 

  15. E.C. Lee, Y.S. Kim, Y.G. Jin, and K.J. Chang, Phys. Rev. B 64, 085120 (2001).

    Article  Google Scholar 

  16. C.L. Perkinsa, S.H. Lee, X. Li, S.E. Asher, and T.J. Coutts, J. Appl. Phys. 97, 034907 (2005).

    Article  Google Scholar 

  17. C.Y. Peng, J.S. Tian, W.L. Wang, Y.T. Ho, and L. Chang, J. Cryst. Growth 265, 553 (2013).

    CAS  Google Scholar 

  18. A. Kato, S. Ono, M. Ikeda, R. Tajima, Y. Adachi, and K. Yasui, Thin Solid Films 644, 29 (2017).

    Article  CAS  Google Scholar 

  19. D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).

    Article  CAS  Google Scholar 

  20. B.K. Meyer, H. Alves, D.M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, and A.V. Rodina, Phys. Status Solidi B 241, 231 (2004).

    Article  CAS  Google Scholar 

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Acknowledgment

We are grateful to the Venture Business Laboratory of Tottori University for assistance through this study.

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Authors and Affiliations

  1. Department of Information and Electronics, Tottori University, 4-101 Koyama-Minami, Tottori, 680-8552, Japan

    Naoki Maekawa, Hirotake Nakayama, Nobuaki Yamane, Koji Irie, Tomoki Abe, Hirofumi Kasada, Kunio Ichino & Kazuaki Akaiwa

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  1. Naoki Maekawa
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  2. Hirotake Nakayama
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  3. Nobuaki Yamane
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  8. Kazuaki Akaiwa
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Correspondence to Tomoki Abe.

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Maekawa, N., Nakayama, H., Yamane, N. et al. p-Type Nonpolar a-ZnO:N Thin Films on r-Sapphire Substrates Grown by Molecular Beam Epitaxy. J. Electron. Mater. 49, 4474–4478 (2020). https://doi.org/10.1007/s11664-020-08034-9

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  • DOI: https://doi.org/10.1007/s11664-020-08034-9

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