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Influence of Crystallographic Orientation on Schottky Barrier Formation in Gallium Oxide

  • Topical Collection: 18th Conference on Defects (DRIP XVIII)
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Abstract

Highly rectifying graphite/β-Ga2O3 Schottky junctions have been prepared by a simple low-cost drop-casting process. The influence of two different crystal orientations on the current transport mechanism in the graphite-based Schottky junctions was investigated by direct-current (DC) and alternating-current (AC) electrical measurements. The nonideal behavior observed for both \( \left\langle {\bar{2}01} \right\rangle \) and \( \left\langle {010} \right\rangle \) crystallographic orientations can be explained by the lateral inhomogeneity of the junction related to the imperfection of the graphite/semiconductor interface. A lower density of interface states and their shorter time constants are reported for Schottky junctions formed on \( \left\langle {\bar{2}01} \right\rangle \) crystallographic plane, as reflected also by the higher effective barrier height and lower ideality factor.

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Acknowledgments

This work was supported by Czech Science Foundation Project 17-00546S.

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Authors and Affiliations

  1. Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberka 1014/57, 18251, Prague, Czech Republic

    Roman Yatskiv, Stanislav Tiagulskyi & Jan Grym

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  1. Roman Yatskiv
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  2. Stanislav Tiagulskyi
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Correspondence to Roman Yatskiv.

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Yatskiv, R., Tiagulskyi, S. & Grym, J. Influence of Crystallographic Orientation on Schottky Barrier Formation in Gallium Oxide. J. Electron. Mater. 49, 5133–5137 (2020). https://doi.org/10.1007/s11664-020-07996-0

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  • DOI: https://doi.org/10.1007/s11664-020-07996-0

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