Skip to main content
SpringerLink
Log in

Negative Differential Resistance (NDR) Behavior of Nickel Oxide (NiO) Based Metal-Insulator-Semiconductor Structures

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

This work presents a metal-insulator-semiconductor (MIS) structure based on nickel oxide (NiO) showing negative differential resistance (NDR) properties. The \({\hbox{Ni}}/{\hbox{NiO}}/{\hbox{HfO}}_2/{\hbox{Ni}}\) layers structure was obtained by multiple sputtering steps and was then characterized by electrical measurements and other relevant methods. The electrical characteristics of the MIS structure were studied as a function of the oxide layer thickness. The observed NDR behavior could be attributed to a combination of the band-bending and a tunneling current contribution.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C. Bayram, Z. Vashaei, and M. Razeghi, Appl. Phys. Lett. 97, 181109 (2010).

    Article  Google Scholar 

  2. F. Akyol, S. Krishnamoorthy, Y. Zhang, J. Johnson, J. Hwang, and S. Rajan, Appl. Phys. Lett. 108, 131103 (2016).

    Article  Google Scholar 

  3. L.L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett. 24, 593 (1974).

    Article  CAS  Google Scholar 

  4. S. Golka, C. Pflügl, W. Schrenk, G. Strasser, C. Skierbiszewski, M. Siekacz, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 88, 17 (2006).

    Article  Google Scholar 

  5. E.T. Koenig, C.I. Huang, and B. Jogai, J. Appl. Phys. 68, 5905 (1990).

    Article  CAS  Google Scholar 

  6. K. Zhang, H. Liang, R. Shen, D. Wang, P. Tao, Y. Liu, X. Xia, Y. Luo, and G. Du, Appl. Phys. Lett. 104, 053507 (2014).

    Article  Google Scholar 

  7. E. Leo, Phys. Rev. 109, 603 (1958).

    Article  Google Scholar 

  8. C.S. Braucks, D. Stange, N.V.D. Driesch, S. Blaeser, Z. Ikonic, J.M. Hartmann, S. Mantl, and D. Buca, Appl. Phys. Lett. 107, 042101 (2015).

    Article  Google Scholar 

  9. I.I. Shtepliuk, Superlattices Microstruct. 71, 62 (2014).

    Article  CAS  Google Scholar 

  10. M.A. Reed, R.T. Bate, and J.W. Lee, Proc. SPIE 0792, 18 (1987).

    Article  CAS  Google Scholar 

  11. Y. Yang, J. Qi, W. Guo, Z. Qin, and Y. Zhang, Appl. Phys. Lett. 96, 093107 (2010).

    Article  Google Scholar 

  12. P. Chen, X. Ma, D. Li, Y. Zhang, and D. Yang, Opt. Express 17, 4712 (2009).

    Article  CAS  Google Scholar 

  13. K. Khan, S. Itapu, and D. Georgiev, MRS Adv. 1, 3341 (2016).

    Article  CAS  Google Scholar 

  14. K. Khan, NiOx Based Device Structures (Thesis, The University of Toledo, 2016). https://etd.ohiolink.edu/. Accessed 21 Dec 2018.

  15. L. Esaki and P.J. Stiles, Phys. Rev. Lett. 16, 1108 (1966).

    Article  Google Scholar 

  16. C. Fumeaux, W. Herrmann, F.K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).

    Article  CAS  Google Scholar 

  17. P.C.D. Hobbs, R.B. Laibowitz, and F.R. Libsch, Appl. Opt. 44, 6813 (2005).

    Article  CAS  Google Scholar 

  18. M.N. Gadalla, M. Abdel-Rahman, and A. Shamim, Sci. Rep. 4, 4270 (2014).

    Article  CAS  Google Scholar 

  19. A. Singh, R. Ratnadurai, R. Kumar, S. Krishnan, Y. Emirov, and S. Bhansali, Appl. Surf. Sci. 334, 197 (2015).

    Article  CAS  Google Scholar 

  20. P.S. Aggarwaland and A. Goswami, J. Phys. Chem. 65, 2105 (1961).

    Article  Google Scholar 

  21. A.M. Soleimanpour, Synthesis, fabrication and surface modification of nanocrystalline nickel oxide for electronic gas sensors (Thesis, The University of Toledo, 2013). https://etd.ohiolink.edu/. Accessed 21 Dec 2018.

  22. S. Kumar, Investigation of bolometric and resistive properties of nickel oxide (Thesis, Rochester Institute of Technology, 2012). https://scholarworks.rit.edu/theses/2752. Accessed 21 Dec 2018.

  23. S. Itapu, K. Khan, and D. Georgiev, MRS Adv. 1, 293 (2016).

    Article  CAS  Google Scholar 

  24. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films 236, 27 (1993).

    Article  CAS  Google Scholar 

  25. J.L. Yang, Y.S. Lai, and J.S. Chen, Thin Solid Films 488, 242 (2005).

    Article  CAS  Google Scholar 

  26. H.L. Chen, Y.M. Lu, and W.S. Hwang, Surf. Coat. Technol. 198, 138 (2005).

    Article  CAS  Google Scholar 

  27. H.L. Chen, Y.M. Lu, and W.S. Hwang, Thin Solid Films 514, 1 (2006).

    Article  Google Scholar 

  28. I. Hotovy, J. Liday, H. Sitter, and P. Vogrinčič, J. Electron. Electr. Eng. 53, 11 (2002).

    Google Scholar 

  29. I. Hotovy, D. Buc, S. Hascik, and O. Nennewitz, Vacuum 50, 41 (1998).

    Article  CAS  Google Scholar 

  30. Y.M. Lu, W.S. Hwang, J.S. Yang, and H.C. Chuang, Thin Solid Films 420–421, 54 (2002).

    Article  Google Scholar 

  31. S. Hall, O. Buiu, I.Z. Mitrovic, Y. Lu, and W.M. Davey, J. Telecommun. Inf. Technol. 2, 33 (2007).

    Google Scholar 

  32. J.H. Choi, Y. Mao, and J.P. Chang, Mater. Sci. Eng. R Rep. 72, 97 (2011).

    Article  Google Scholar 

  33. K.C. Das, S.P. Ghosh, N. Tripathy, G. Bose, A. Ashok, P. Pal, D.H. Kim, T.I. Lee, J.M. Myoung, and J.P. Kar, J. Mater. Sci. 26, 6025 (2015).

    CAS  Google Scholar 

  34. S. Dueñas, H. Castan, H. Garcia, A. Gomez, L. Bailon, M.T. Luque, I. Martil, and G.G. Diaz, Semicond. Sci. Technol. 22, 1344 (2007).

    Article  Google Scholar 

  35. M. Vargas, N.R. Murphy, and C.V. Ramana, Opt. Mater. 37, 621 (2014).

    Article  CAS  Google Scholar 

  36. F.L. Martinez, M.T. Luque, J.J. Gandia, J. Carabe, W. Bohne, J. Rohrich, E. Strub, and I. Martil, J. Phys. D Appl. Phys. 40, 5256 (2007).

    Article  CAS  Google Scholar 

  37. J. Shewchun, M.A. Green, and F.D. King, Solid State Electron. 17, 563 (1974).

    Article  CAS  Google Scholar 

  38. M.A. Green, F.D. King, and J. Shewchun, Solid State Electron. 17, 551 (1974).

    Article  CAS  Google Scholar 

  39. S.M. Sze, Semiconductor Devices: Physics and Technology (New York: Wiley, 2006), p. 568.

    Book  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Electrical Engineering and Computer Science (EECS), The University of Toledo, Toledo, OH, 43606, USA

    Kamruzzaman Khan, Srikanth Itapu & Daniel G. Georgiev

  2. Materials Science and Engineering (MSE), University of Michigan, Ann Arbor, MI, 48105, USA

    Kamruzzaman Khan

Authors
  1. Kamruzzaman Khan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Srikanth Itapu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Daniel G. Georgiev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Kamruzzaman Khan.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Khan, K., Itapu, S. & Georgiev, D.G. Negative Differential Resistance (NDR) Behavior of Nickel Oxide (NiO) Based Metal-Insulator-Semiconductor Structures. J. Electron. Mater. 49, 333–340 (2020). https://doi.org/10.1007/s11664-019-07781-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-019-07781-8

Keywords

Search

Navigation