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Effect of Concentration of Single-Wall Carbon Nanotubes (SWCNTs) in a SWCNTs/ZnO Nanorods Channel-Based Thin-Film Transistor

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Abstract

Fabrication of three thin-film transistor devices by deposition of single-walled carbon nanotubes (SWCNTs) thin film over hydrothermally grown nanorods of zinc oxide (ZnO) on silicon dioxide (SiO2) layered n-type silicon is reported. In this architecture, SWCNTs/ZnO nanorods were used for the channel layer. The silicon dioxide deposited over silicon substrate was used as a dielectric. Three devices were prepared by varying the concentration of carbon nanotubes to investigate the effect on electrical properties of prepared thin-film transistors. XRD and EDX analysis was performed for the study of structural and elemental properties. Scanning electron microscopy (SEM) was used to examine the surface morphology of SWCNTs/ZnO nanorods. Transfer and output characteristics were studied using a Keithley SourceMeter. I–V analysis revealed that an increase in the concentration of carbon nanotubes increased the mobility values and Ion/Ioff, but the threshold voltage was decreased.

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Authors and Affiliations

  1. Department of Physics, Forman Christian College, Lahore, Pakistan

    Hamid Latif, Saba Rasheed, S. Zaheer & Mahroze Munam

  2. Department of Physics, COMSATS Institute of Information Technology, Lahore, Pakistan

    Abdul Sattar & Arsalan Usman

  3. Department of Physics, University of Engineering and Technology, Lahore, Pakistan

    M. Shahid Rafique

  4. Department of Chemistry, Government College University, Lahore, Pakistan

    Ayesha Imtiaz

Authors
  1. Hamid Latif
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  2. Saba Rasheed
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  3. Abdul Sattar
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  4. M. Shahid Rafique
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  5. S. Zaheer
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  6. Arsalan Usman
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  7. Mahroze Munam
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  8. Ayesha Imtiaz
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Correspondence to Hamid Latif.

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Latif, H., Rasheed, S., Sattar, A. et al. Effect of Concentration of Single-Wall Carbon Nanotubes (SWCNTs) in a SWCNTs/ZnO Nanorods Channel-Based Thin-Film Transistor. J. Electron. Mater. 48, 7055–7062 (2019). https://doi.org/10.1007/s11664-019-07517-8

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  • DOI: https://doi.org/10.1007/s11664-019-07517-8

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