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Rare Earth Doping Brings Thermal Stability Improvement in Zn0.15Sb0.85 Alloy for Phase Change Memory Application

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Abstract

In this paper, the rare earth (Er or Sm) doped Zn0.15Sb0.85 films were synthesized by magnetron sputtering. The crystallization temperature (Tc), activation energy (Ea) and the temperature for ten year data retention (Tten) of the thin films were increased significantly by increasing rare earth dopants, revealing thermal stability improvement. Importantly, it was found that the Sm doping was a more effective way to increase Tc and Tthan compared with Er doping due to its lower electronegativity. Therefore, the Zn0.15Sb0.85 alloys by rare earth doping, which exhibited excellent thermal stability, were the promising candidates for phase change memory application.

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Acknowledgments

The work was supported by National Natural Science Foundation of China (No. 11774438), Natural Science Foundation of Jiangsu Province (No. BK20151172), Changzhou Sci&Tech Program (Nos. CM20173002, CJ20160028), and sponsored by Qing Lan Project.

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Authors and Affiliations

  1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213001, People’s Republic of China

    Hua Zou, Yifeng Hu, Xiaoqin Zhu, Yuemei Sun, Fengfei Wang, Jianhao Zhang & Yongxing Sui

  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People’s Republic of China

    Zhitang Song

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  1. Hua Zou
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  2. Yifeng Hu
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  3. Xiaoqin Zhu
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Correspondence to Hua Zou or Xiaoqin Zhu.

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Zou, H., Hu, Y., Zhu, X. et al. Rare Earth Doping Brings Thermal Stability Improvement in Zn0.15Sb0.85 Alloy for Phase Change Memory Application. J. Electron. Mater. 48, 4362–4367 (2019). https://doi.org/10.1007/s11664-019-07219-1

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  • DOI: https://doi.org/10.1007/s11664-019-07219-1

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