Electronic and Bandgap Tuning of Hydrogenated Ti-doped CdO Semiconductor
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The physical vapour deposition method was employed to study and improve the optoelectronic properties of CdO as a transparent conducting oxide (TCO), using the doping technique. Different small amounts of titanium ions were incorporated into CdO thin films deposited on glass substrates and were used to study the conduction parameters CPs (conductivity/resistivity, carrier mobility, and carrier concentration) together with the optical transparency. Different diagnostic methods, x-ray diffraction, optical absorption spectroscopy, scanning electron microscopy and electrical measurements were used to study and characterize the deposited thin films. The results of this work, revealed that the ultimate TCO CPs were obtained with Ti doping level of 0.3–0.6 wt.%; the mobility∼ 40 cm2/V.s, carrier concentration ∼ 7×1020 cm−3 and conductivity ∼ 2.88 × 103 S/cm. The results, also revealed that Ti doping strongly enhanced the  preferred orientation growth of CdO films especially with 0.3 wt.%.
KeywordsCadmium-titanium oxide Ti-doped CdO TCO
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