Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer

  • M. Uma
  • N. Balaram
  • P. R. Sekhar Reddy
  • V. Janardhanam
  • V. Rajagopal ReddyEmail author
  • Hyung-Joong Yun
  • Sung-Nam Lee
  • Chel-Jong Choi


This paper demonstrates the role of high-k La2O3 on the electrical performance of the Au/n-GaN Schottky junction (SJ) as an insulating layer between the Au and n-GaN films. First, the La2O3 is deposited on a n-type GaN surface by e-beam technique and analysed for its structural and chemical properties with x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) approaches. XRD and XPS results confirmed the growth of La2O3 on the n-GaN surface. Then, the Au/La2O3/n-GaN metal/insulator/semiconductor (MIS) junction is fabricated and analysed for its electrical properties and compared with the SJ electrical results. The MIS junction exhibits a good rectifying nature with a low leakage current compared to the SJ. Experimental findings reveal a higher barrier height obtained for the MIS junction than the SJ, suggesting that the barrier height is altered by the La2O3 insulating layer. Also, the barrier heights are estimated by Cheung’s, Norde functions and ΨSV plot, and the values are nearly matched with each other, indicating the techniques used here are valid. The extracted interface state density (NSS) of MIS junction is lower than the SJ, implying the La2O3 insulating layer plays a vital role in the decreased NSS. Experimental findings confirmed that the Schottky emission governs the reverse current in SJ. However, for the MIS junction, the Poole–Frenkel and Schottky emissions are the dominant current conduction mechanisms in the lower and higher bias regions.


High-k lanthanum oxide n-type GaN structural and chemical properties MIS junction electrical properties carrier transport mechanism 


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This work was supported by the National Research Foundation of Korea (NRF) grant (NRF-2017R1A2B2003365) funded by the Ministry of Education, Republic of Korea, and by the Transfer machine specialized lighting core technology development professional manpower training project (Project No. N0001363) funded by the Ministry of Trade, Industry and Energy, Republic of Korea.


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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  • M. Uma
    • 1
  • N. Balaram
    • 1
  • P. R. Sekhar Reddy
    • 2
  • V. Janardhanam
    • 2
  • V. Rajagopal Reddy
    • 1
    Email author
  • Hyung-Joong Yun
    • 3
  • Sung-Nam Lee
    • 4
  • Chel-Jong Choi
    • 2
  1. 1.Department of PhysicsSri Venkateswara UniversityTirupatiIndia
  2. 2.School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC)Chonbuk National UniversityJeonjuRepublic of Korea
  3. 3.Advanced Nano Surface Research GroupKorea Basic Science InstituteDaejeonRepublic of Korea
  4. 4.Department of Nano-Optical EngineeringKorea Polytechnic UniversitySiheungRepublic of Korea

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