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Approach to Defect-Free Lifetime and High Electron Density in CdTe

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Abstract

Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 1018 cm−3 was achieved simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.

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Swain, S.K., Duenow, J.N., Johnston, S.W. et al. Approach to Defect-Free Lifetime and High Electron Density in CdTe. J. Electron. Mater. 48, 4235–4239 (2019). https://doi.org/10.1007/s11664-019-07190-x

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  • DOI: https://doi.org/10.1007/s11664-019-07190-x

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