Abstract
Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to a variety of semiconductors. Graphitic contacts to n-type 6H-SiC have demonstrated current rectification ratios (at ± 1.5 V) up to 1:106. In this article, the current voltage temperature (I–V–T) characteristics of these devices are examined to reveal more detail on the junction/barrier properties that are critical to performance. Analysis of the I–V–T characteristics and disparity between barrier heights extracted from the I–V–T data and C–V data show inhomogeneity in the contacts and this has been quantified. Accounting for the inhomogeneity, the homogeneous Richardson constant of the n-type 6H-SiC can be extracted from the I–V–T data, and this value agrees with the reported theoretical value.
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Pham, H., Tran, H.N., Holland, A.S. et al. Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes. J. Electron. Mater. 48, 2061–2066 (2019). https://doi.org/10.1007/s11664-019-06963-8
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DOI: https://doi.org/10.1007/s11664-019-06963-8