Abstract
Mercury cadmium telluride (HgCdTe, or MCT) with low n-type indium doping concentration offers a means for obtaining high performance infrared detectors. Characterizing carrier transport in materials with ultra low doping (ND = 1014 cm−3 and lower), and multi-layer material structures designed for infrared detector devices, is particularly challenging using traditional methods. In this work, Hall effect measurements with a swept B-field were used in conjunction with a multi-carrier fitting procedure and Fourier-domain mobility spectrum analysis to analyze multi-layered MCT samples. Low temperature measurements (77 K) were able to identify multiple carrier species, including an epitaxial layer (x = 0.2195) with n-type carrier concentration of n = 1 × 1014 cm−3 and electron mobility of μ = 280000 cm2/Vs. The extracted electron mobility matches or exceeds prior empirical models for MCT, illustrating the outstanding material quality achievable using current epitaxial growth methods, and motivating further study to revisit previously published material parameters for MCT carrier transport. The high material quality is further demonstrated via observation of the quantum Hall effect at low temperature (5 K and below).
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Acknowledgements
The authors would like to thank Professor Lu Li for assistance with the PPMS Dynacool measurement system, Professor Cagliyan Kurdak for assistance with the quantum Hall measurements, and the National Science Foundation Major Research Instrumentation Award No. DMR-1428226 (supporting the equipment for electrical transport characterization). In addition, this work was supported by the Air Force Office of Scientific Research Awards FA9550-15-1-0247 and FA9550-15-1-0377.
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Easley, J., Arkun, E., Cui, B. et al. Analysis of Carrier Transport in n-Type Hg1−xCdxTe with Ultra-Low Doping Concentration. J. Electron. Mater. 47, 5699–5704 (2018). https://doi.org/10.1007/s11664-018-6431-2
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DOI: https://doi.org/10.1007/s11664-018-6431-2