The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals
This paper reports the formation of structural defects in the lattice of silicon (n-Si) single crystals, as a result of irradiation by different intensities and pulses of electrons. The samples were studied by means of Hall effect measurements of electro-physical parameters (specifically the concentration of the main charge carriers) as a function of temperature and radiation dose. The role of the radiation current density (pulse height) is discussed, which gives rise to a peculiar behavior in the electrical-physical properties of n-Si. In particular, thermal processes are found not to develop, due to the ultrafast (pulse duration in the range 10−12–10−13s) nature of the incident radiation, which causes an almost “pure” energy interaction to occur between the radiation and the atoms within the crystal, and the formation of cluster defects. A scheme for the time-scale of the formation of these radiation defects is presented. From the dose and temperature dependences of the concentration of main charge carriers, the radiation defects introduction rates were determined.
KeywordsSilicon crystal irradiation electro-physical properties radiation defects pulse irradiation
Unable to display preview. Download preview PDF.
Conflict of interest
The authors declare that they have no conflict of interest.
- 3.H.J. Stein, IEEE Trans. Rad. Defects. Conf. on Irrad. effects in Semiconductors. Toulouse, 7-11 March, 1967.Google Scholar
- 4.D.I. Vaisburd, in Intern. Conf. on Rad. Physics of Semiconductors and Related Materials, p. 198. Tbilisi, 1980.Google Scholar
- 7.L.E. Garzeva, L.V. Levchuk, V.N. Mordkovich, and M.I. Starchik, Radiation defects in non-metallic Crystals,v.3, chapter 1, Kiev, “Naukova Dumka”—edition, p. 284, 1971.Google Scholar
- 8.G.D. Watkins, Materials science and technology, Vol. 4/5, ed. R.W. Cahn, P. Haasen, and E.J. Kramer (Hoboken: Wiley, 2005), p. 105.Google Scholar
- 9.D.V. Gromov, V.N. Mordkovich, D.M. Pazhin, and P.K. Skorobogatov, Electron Techn Ser 2 Semiconduct Devices Issue 1, 19 (2011).Google Scholar
- 11.V.M. Lenchenko, Physical-Chemical Problems of Solid States (Siberia: Edition of Krasnoyarks University, 1975), p. 3.Google Scholar
- 12.V.S. Vavilov, and N.A. Ukhin, Radiation Effects in Semiconductors and Semiconductor Devices, Atom-edition (Moscow, 1969) p. 310.Google Scholar
- 13.R.F. Konopleva, and V.I. Ostroumov, The Interaction of Charged High Energy Particles with Silicon and Germanium. Atom-edition (Moscow, 1975) p. 127.Google Scholar
- 14.H.N. Yeritsyan, A.A. Sahakyan, S.K. Nikoghosyan, V.V. Harutyunyan, S. Ohanyan, and V.S. Avagyan. J. Spacecr. Rockets 48(1), 34 (2011). Publication of Amer. Inst. of Aeronautics and Astronautics (NASA).Google Scholar
- 16.M.K. Sheinkman and A.I. Shik, Fizika i Tekhnika Poluprovodnikov (Russian) 10, 209 (1976).Google Scholar
- 20.K. Takakura, H. Ohyama, H. Murakawa, T. Yoshida, J.M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, J. Appl. Phys. 27, 133–135 (2004).Google Scholar