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Journal of Electronic Materials

, Volume 47, Issue 7, pp 4177–4189 | Cite as

Effect of Substrate Composition on Whisker Growth in Sn Coatings

  • Piyush Jagtap
  • P. Ramesh Narayan
  • Praveen Kumar
Article

Abstract

Whisker growth was studied in Sn coatings deposited on three different substrates, namely pure Cu, brass (Cu-35 wt.% Zn) and pure Ni. Additionally, the effect of a Ni under-layer (electro- or sputter-deposited and placed between the Sn coating and the substrate) on whisker growth was also studied. It was observed that the substrate composition and placement of under-layers significantly affected the whisker growth in Sn coating by altering the growth rate and the morphology of the interfacial intermetallic compounds (IMC). Whisker propensity was the highest when Sn coatings were deposited directly on the brass substrate, while it was completely inhibited for at least a year when the coatings were deposited on either pure Ni or brass with a Ni under-layer. Bulk and surface stress measurements revealed that the surface of the Sn coatings on Ni, irrespective of whether it was in bulk or under-layer form, remained more compressive as compared to the bulk, throughout the observation period. Therefore, a negative out-of-plane stress gradient, which is crucial for whisker growth, could never be established in these samples. Interestingly, a phenomenon of through-thickness columnar voiding (reverse of whiskering) was observed in the Sn coatings deposited on Ni. The origin of this phenomenon is discussed.

Keywords

Intermetallic compounds Ni under-layer Sn whiskering stress gradient through-thickness columnar voids 

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Supplementary material

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References

  1. 1.
    G.T. Galyon, IEEE Trans. Electron. Packag. Manuf. 28, 94 (2005).CrossRefGoogle Scholar
  2. 2.
    European Parliament Directive 2002/95/Ec on restriction of the use of certain hazardous substances in electrical and electronic equipment. http://eur-lex.europa.eu/LexUriServ/LexUriServ.do?uri=OJ:L:2003:037:0019:0023:en:PDF. Accessed 25 July 2017.
  3. 3.
    D. Romm, B. Lange, and A. Linear, Texas Instruments Application Report SZZA024 (2001), p. 1.Google Scholar
  4. 4.
    P. Jagtap, Whisker growth from electrodeposited Sn coatings: Developing materials science and mechanics-based perspectives, Ph.D. thesis, Indian Institute of Science, July (2016).Google Scholar
  5. 5.
    K.N. Tu, Acta Metall. 21, 347 (1973).CrossRefGoogle Scholar
  6. 6.
    K.N. Tu, Mater. Chem. Phys. 46, 217 (1996).CrossRefGoogle Scholar
  7. 7.
    V.K. Glazunova and N.T. Kudryavtsev, Zhurnal Prikladnoi Khimii 36, 543 (1963).Google Scholar
  8. 8.
    S.C. Britton and M. Clarke, in Proceedings 6th International Metal Finishing Conference (1964), p. 205.Google Scholar
  9. 9.
    B.D. Dunn, European Space Agency (ESA) Report, STR-223 (1987), p. 1.Google Scholar
  10. 10.
    P. Elmgren, Molex Advanced Development Report (2002) 1. pelmgren@molex.com. Accessed 25 July 2017.Google Scholar
  11. 11.
    R. Schetty, in Proceedings IPC Works Conference, Miami, FL, S-02-3-1 (2000).Google Scholar
  12. 12.
    R. Schetty, N. Brown, A. Egli, J. Heber, and A. Vinckler, in Proceedings AESF SUR/FIN Conference (2001), p. 1.Google Scholar
  13. 13.
    C. Xu, C. Fan, A. Vysotskoya, J. Abys, Y. Zhang, L. Hopkins, and F. Stevie, in Proceedings AESF SUR/FIN Conference (2001).Google Scholar
  14. 14.
    C. Xu, Y. Zhang, C. Fan, J. Abys, L. Hopkins, and F. Stevie, in Proc. IPC SMEMA APEX Conf., (2002) S-06-2-6.Google Scholar
  15. 15.
    Y. Zhang, C. Xu, C. Fan, J. Abys, and A. Vysotskaya, in Proceedings IPC SMEMA APEX Conference S06-1-1–S06-1-10 (2002).Google Scholar
  16. 16.
    K.N. Tu, J.O. Suh, A.T.C. Wu, N. Tamura, and C.H. Tung, Mater. Trans. 46, 11 (2005).Google Scholar
  17. 17.
    J. Brusse, G.J. Ewell, and J.P. Siplon, in Proceedings 22nd Capacitor and Resistor Technology Symposium (CARTS) (2002), p. 67.Google Scholar
  18. 18.
    N. Vo and M. Tsuriya, in Proceedings ECO Design Japan Symposium (2002), p. 120.Google Scholar
  19. 19.
    L. Panashchenko and M. Osterman, Electronic Components and Technology Conference (2009), p. 1037.Google Scholar
  20. 20.
    P. Jagtap, V. Sethuraman, and P. Kumar, J. Electron. Mater. (under review).Google Scholar
  21. 21.
    P. Jagtap and P. Kumar, J. Electron. Mater. 44, 1206 (2015).CrossRefGoogle Scholar
  22. 22.
    P. Jagtap, A. Chakraborty, P. Eisenlohr, and P. Kumar, Acta Mater. 134, 346 (2017).CrossRefGoogle Scholar
  23. 23.
    G.T. Galyon and L. Palmer, IEEE Trans, Electron. Packag. Manuf. 28, 17 (2005).CrossRefGoogle Scholar
  24. 24.
    A. Baated, K.S. Kim, and K. Suganuma, J. Mater. Sci. Mater. Electron. 22, 1685 (2011).CrossRefGoogle Scholar
  25. 25.
    E. Chason, N. Jadhav, and F. Pei, JOM 63, 62 (2011).CrossRefGoogle Scholar
  26. 26.
    J. Haimovich, in Proceedings of the Twelfth Annual Electronics Manufacturing Seminar (1988), p. 102.Google Scholar
  27. 27.
    W.J. Boettinger, M.D. Vaudin, M.E. Williams, L.A. Bendersky, and W.R. Wagner, J. Electron. Mater. 32, 511 (2003).CrossRefGoogle Scholar
  28. 28.
    W. Zhang, M. Clauss, and F. Schwager, IEEE Trans. Compon. Packag. Manuf. Technol. 1, 1259 (2011).CrossRefGoogle Scholar
  29. 29.
    J. Hektor, J.B. Marijon, M. Ristinmaa, S.A. Hall, H. Hallberg, S. Iyengar, J.S. Micha, O. Robach, F. Grennerat, and O. Castelnau, Scr. Mater. 144, 1 (2018).CrossRefGoogle Scholar
  30. 30.
    B.F. Dyson, T.R. Anthony, and D. Turnbull, J. Appl. Phys. 38, 3408 (1967).CrossRefGoogle Scholar
  31. 31.
    J. Stein, C.C. Tineo, U. Welzel, W. Huegel, and E.J. Mittemeijer, J. Electron. Mater. 44, 886 (2015).CrossRefGoogle Scholar
  32. 32.
    S.M. Miller, U. Sahaym, and M.G. Norton, Metall. Mater. Trans. A 41, 3386 (2010).CrossRefGoogle Scholar
  33. 33.
    D.C. Yeh and H.B. Huntington, Phys. Rev. Lett. 53, 1469 (1984).CrossRefGoogle Scholar
  34. 34.
    S.A. Belyakov and C.M. Gourlay, J. Electron. Mater. 41, 3331 (2012).CrossRefGoogle Scholar
  35. 35.
    F. Han, W. Li, C. Lei, B. He, K. Oshida, and A. Lu, Small 10, 2637 (2014).CrossRefGoogle Scholar
  36. 36.
    M.A. Ashworth, G.D. Wilcox, R.L. Higginson, R.J. Heath, and C. Liu, J. Electron. Mater. 43, 442 (2014).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • Piyush Jagtap
    • 1
  • P. Ramesh Narayan
    • 2
  • Praveen Kumar
    • 1
  1. 1.Department of Materials EngineeringIndian Institute of ScienceBangaloreIndia
  2. 2.Materials and Metallurgy GroupVikram Sarabhai Space Centre, Indian Space Research OrganizationTrivandrumIndia

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