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Influence of the Interaction Between Graphite and Polar Surfaces of ZnO on the Formation of Schottky Contact

Journal of Electronic Materials volume 47, pages 5002–5006 (2018)Cite this article

Abstract

We show that the interaction between graphite and polar surfaces of ZnO affects electrical properties of graphite/ZnO Schottky junctions. A strong interaction of the Zn-face with the graphite contact causes interface imperfections and results in the formation of laterally inhomogeneous Schottky contacts. On the contrary, high quality Schottky junctions form on the O-face, where the interaction is significantly weaker. Charge transport through the O-face ZnO/graphite junctions is well described by the thermionic emission model in both forward and reverse directions. We further demonstrate that the parameters of the graphite/ZnO Schottky diodes can be significantly improved when a thin layer of ZnO2 forms at the interface between graphite and ZnO after hydrogen peroxide surface treatment.

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Authors and Affiliations

  1. Institute of Photonics and Electronics, Czech Academy of Sciences, Chaberka 57, 18251, Prague 8, Czech Republic

    R. Yatskiv & J. Grym

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  1. R. Yatskiv
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  2. J. Grym
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Correspondence to R. Yatskiv.

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Yatskiv, R., Grym, J. Influence of the Interaction Between Graphite and Polar Surfaces of ZnO on the Formation of Schottky Contact. J. Electron. Mater. 47, 5002–5006 (2018). https://doi.org/10.1007/s11664-018-6244-3

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  • DOI: https://doi.org/10.1007/s11664-018-6244-3

Keywords

  • ZnO
  • Schottky contact
  • graphite-ZnO interfaces
  • metal-insulator-semiconductor