Abstract
Intermediate band solar cells (IBSCs) are designed to enhance the photovoltaic efficiency significantly over that of a single-junction solar cell as determined by the Shockley–Queisser limit. In this work we present calculations to determine parameters of type-II Zn1−xCdxTe/Zn1−yCdySe quantum dots (QDs) grown on the InP substrate suitable for IBSCs. The calculations are done via the self-consistent variational method, accounting for the disk form of the QDs, presence of the strained ZnSe interfacial layer, and under conditions of a strain-free device structure. We show that to achieve the required parameters relatively thick QDs are required. Barriers must contain Cd concentration in the range of 35–44%, while Cd concentration in QD can vary widely from 0% to 70%, depending on their thickness to achieve the intermediate band energies in the range of 0.50–0.73 eV. It is also shown that the results are weakly dependent on the barrier thickness.
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Imperato, C.M., Ranepura, G.A., Deych, L.I. et al. Theoretical Determination of Optimal Material Parameters for ZnCdTe/ZnCdSe Quantum Dot Intermediate Band Solar Cells. J. Electron. Mater. 47, 4325–4331 (2018). https://doi.org/10.1007/s11664-018-6241-6
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DOI: https://doi.org/10.1007/s11664-018-6241-6