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Electrical Characterization of Graphite/InP Schottky Diodes by I–V–T and C–V Methods

  • Topical Collection: 17th Conference on Defects (DRIP XVII)
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Abstract

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I–V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current–voltage and capacitance–voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

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Authors and Affiliations

  1. Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 57, CZ-18251, Prague 8, Czech Republic

    Stanislav Tiagulskyi, Roman Yatskiv & Jan Grym

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  1. Stanislav Tiagulskyi
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  2. Roman Yatskiv
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  3. Jan Grym
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Correspondence to Stanislav Tiagulskyi.

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Tiagulskyi, S., Yatskiv, R. & Grym, J. Electrical Characterization of Graphite/InP Schottky Diodes by I–V–T and C–V Methods. J. Electron. Mater. 47, 4950–4954 (2018). https://doi.org/10.1007/s11664-018-6123-y

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  • DOI: https://doi.org/10.1007/s11664-018-6123-y

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