Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis
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Hafnium oxide (HfO2) nanoparticles were prepared by a chemical precipitation method and its physical and electrical properties were investigated. HfO2 thin films were prepared via a dip-coating method using the synthesized HfO2 nanoparticles. The crystallinity and resistivity of both prepared thin films were analysed by x-ray diffraction and impedance analyser. The crystalline size was found to be 8 nm and 13 nm for HfO2 and SiO2 thin films, respectively. The electrical (bulk) resistance was calculated by fitting the complex impedance plane using z-view software, and was found to be 2.15 × 107 Ω for HfO2, whereas it was found to be 3.6 × 105 Ω for SiO2 thin films. Junctionless nanowire transistors were implemented using HfO2 dielectric and performance was compared to SiO2 gate dielectric. The results revealed that nano-sized HfO2 proves to be a better gate dielectric material than conventional gate dielectrics. Thus, the nano-sized HfO2 based junctionless transistor device is more suitable for future low power applications.
KeywordsElectronics device materials high-k gate dielectrics materials material characterization device simulation
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- 38.B.N. Dash, P. Dash, R. Biswal, and N.C. Mishra, J. Comput. Theor. Nanosci. 20, 601 (2014).Google Scholar