DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment
In this work, we have fabricated low-temperature sol–gel spin-coated and oxygen (O2) plasma treated ZrO2 thin film-based metal–insulator–semiconductor devices. To understand the impact of plasma treatment on the Si/ZrO2 interface, deep level transient spectroscopy measurements were performed. It is reported that the interface state density (D it) comes down to 7.1 × 1010 eV−1 cm−2 from 4 × 1011 eV−1 cm−2, after plasma treatment. The reduction in D it is around five times and can be attributed to the passivation of oxygen vacancies near the Si/ZrO2 interface, as they try to relocate near the interface. The energy level position (E T) of interfacial traps is estimated to be 0.36 eV below the conduction band edge. The untreated ZrO2 film displayed poor leakage behavior due to the presence of several traps within the film and at the interface; O2 plasma treated films show improved leakage current density as they have been reduced from 5.4 × 10−8 A/cm2 to 1.98 × 10−9 A/cm2 for gate injection mode and 6.4 × 10−8 A/cm2 to 6.3 × 10−10 A/cm2 for substrate injection mode at 1 V. Hence, we suggest that plasma treatment might be useful in future device fabrication technology.
KeywordsInterface DLTS MIS defect thin film plasma treatment
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