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Study of Diffusion Barrier for Solder/n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

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Abstract

This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

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Authors and Affiliations

  1. Department of Chemical and Materials Engineering, National Central University, Taoyuan City, 32001, Taiwan

    Wen-Chih Lin, Ying-Sih Li & Albert T. Wu

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  1. Wen-Chih Lin
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  2. Ying-Sih Li
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  3. Albert T. Wu
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Correspondence to Albert T. Wu.

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Lin, WC., Li, YS. & Wu, A.T. Study of Diffusion Barrier for Solder/n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules. J. Electron. Mater. 47, 148–154 (2018). https://doi.org/10.1007/s11664-017-5906-x

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  • DOI: https://doi.org/10.1007/s11664-017-5906-x

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