Abstract
Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol–gel derived anatase titania films on ultrasonically cleaned (100) p-silicon substrates at temperatures T ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-dependent behavior of the AC conductivity σ ac(f, T) obeys the universal power law, and the values of the effective hopping barrier and hopping distance were found to be 0.79 eV and 6.7 × 10−11 m from an analysis due to the correlated barrier-hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of 41.5 meV.
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Acknowledgement
Dr. R. Capan is grateful to the Leverhulme Trust Foundation for the award of a fellowship to visit the UK. Gratitude is also due to Dr. Lesley Hanna, Dr. Myles Worsley and Miss Virginia Martin Torrejon of Institute of Materials and Manufacturing, Brunel University London, for help in preparing the manuscript.
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Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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Capan, R., Ray, A.K. Dielectric Measurements on Sol–Gel Derived Titania Films. J. Electron. Mater. 46, 6646–6652 (2017). https://doi.org/10.1007/s11664-017-5670-y
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DOI: https://doi.org/10.1007/s11664-017-5670-y