Abstract
Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ∼7 × 1015 cm−3, 8.4 × 1016 cm−3, and 8.4 × 1017 cm−3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ∼8 × 1015 cm−3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm−3 and 8.4 × 1016 cm−3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.
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Sohal, S., Edirisooriya, M., Ogedengbe, O.S. et al. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy. J. Electron. Mater. 46, 5361–5366 (2017). https://doi.org/10.1007/s11664-017-5646-y
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DOI: https://doi.org/10.1007/s11664-017-5646-y