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Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices

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Abstract

The influence of dopant concentration on both in-plane mobility and minority carrier lifetime in long-wave infrared InAs/InAsSb superlattices (SLs) was investigated. Unintentially doped (n-type) and various concentrations of Be-doped (p-type) SLs were characterized using variable-field Hall and photoconductive decay techniques. Minority carrier lifetimes in p-type InAs/InAsSb SLs are observed to decrease with increasing carrier concentration, with the longest lifetime at 77 K determined to be 437 ns, corresponding to a measured carrier concentration of p 0 = 4.1 × 1015 cm−3. Variable-field Hall technique enabled the extraction of in-plane hole, electron, and surface electron transport properties as a function of temperature. In-plane hole mobility is not observed to change with doping level and increases with reducing temperature, reaching a maximum at the lowest temperature measured of 30 K. An activation energy of the Be-dopant is determined to be 3.5 meV from Arrhenius analysis of hole concentration. Minority carrier electrons populations are suppressed at the highest Be-doping levels, but mobility and concentration values are resolved in lower-doped samples. An average surface electron conductivity of 3.54 × 10−4 S at 30 K is determined from the analysis of p-type samples. Effects of passivation treatments on surface conductivity will be presented.

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Authors and Affiliations

  1. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA

    A. E. Brown, N. Baril, D. Zuo, L. A. Almeida, J. Arias & S. Bandara

  2. CACI Technologies, Arlington, VA, USA

    J. Arias

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  1. A. E. Brown
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  2. N. Baril
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  3. D. Zuo
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  4. L. A. Almeida
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  6. S. Bandara
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Correspondence to A. E. Brown.

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Brown, A.E., Baril, N., Zuo, D. et al. Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices. J. Electron. Mater. 46, 5367–5373 (2017). https://doi.org/10.1007/s11664-017-5621-7

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  • DOI: https://doi.org/10.1007/s11664-017-5621-7

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