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Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on n-Silicon Substrate

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Abstract

An a-IGZO/n-Si heterojunction device has been fabricated at room temperature by depositing amorphous InGaZnO (a-IGZO) film on n-type silicon substrate by plasma-assisted pulsed laser deposition and its optoelectrical properties studied in detail. The heterojunction showed distinct rectifying characteristic with rectification ratio of 1.93 × 103 at ±2 V bias and reverse leakage current density of 1.6 × 10−6 A cm−2 at −2 V bias. More interestingly, the heterojunction not only showed the characteristic of unbiased photoresponse, but could also detect either ultraviolet or ultraviolet–visible light by simply changing the polarity of the bias applied to the heterojunction. The variable photoresponse phenomenon and the charge transport mechanisms in the heterojunction are explained based on the energy band diagram of the heterojunction.

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Acknowledgements

This work is supported by the Educational Commission of Heilongjiang Province of China (Grant No. 12531Z006).

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Authors and Affiliations

  1. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, People’s Republic of China

    D. L. Jiang, L. Li & Z. K. Xu

  2. Key Laboratory of In-Fiber Integrated Optics, Ministry of Education and College of Science, Harbin Engineering University, Harbin, 150001, People’s Republic of China

    X. Z. Ma

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  1. D. L. Jiang
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  2. X. Z. Ma
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  3. L. Li
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  4. Z. K. Xu
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Correspondence to L. Li.

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Jiang, D.L., Ma, X.Z., Li, L. et al. Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on n-Silicon Substrate. J. Electron. Mater. 46, 6084–6088 (2017). https://doi.org/10.1007/s11664-017-5555-0

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  • DOI: https://doi.org/10.1007/s11664-017-5555-0

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