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A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

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Abstract

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrödinger–Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, 06500, Teknikokullar, Ankara, Turkey

    J. M. All Abbas, G. Atmaca, P. Narin, E. Kutlu, B. Sarikavak-Lisesivdin & S. B. Lisesivdin

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  1. J. M. All Abbas
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  2. G. Atmaca
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  3. P. Narin
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  4. E. Kutlu
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  5. B. Sarikavak-Lisesivdin
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  6. S. B. Lisesivdin
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Correspondence to G. Atmaca.

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All Abbas, J.M., Atmaca, G., Narin, P. et al. A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures. J. Electron. Mater. 46, 5278–5286 (2017). https://doi.org/10.1007/s11664-017-5540-7

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  • DOI: https://doi.org/10.1007/s11664-017-5540-7

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