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Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites

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Abstract

This article describes a fully printed memory in which a composite of Cu–SiO2 nanowires dispersed in ethylcellulose acts as a resistive switch between printed Cu and Au electrodes. A 16-cell crossbar array of these memristors was printed with an aerosol jet. The memristors exhibited moderate operating voltages (∼3 V), no degradation over 104 switching cycles, write speeds of 3 μs, and extrapolated retention times of 10 years. The low operating voltage enabled the programming of a fully printed 4-bit memristor array with an Arduino. The excellent performance of these fully printed memristors could help enable the creation of fully printed RFID tags and sensors with integrated data storage.

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Author information

Authors and Affiliations

  1. Department of Chemistry, Duke University, Durham, NC, 27708, USA

    Matthew J. Catenacci, Patrick F. Flowers, Aaron D. Franklin & Benjamin J. Wiley

  2. Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708, USA

    Changyong Cao, Joseph B. Andrews & Aaron D. Franklin

Authors
  1. Matthew J. Catenacci
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  2. Patrick F. Flowers
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  3. Changyong Cao
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  4. Joseph B. Andrews
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  5. Aaron D. Franklin
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  6. Benjamin J. Wiley
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Corresponding author

Correspondence to Benjamin J. Wiley.

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Catenacci, M.J., Flowers, P.F., Cao, C. et al. Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites. J. Electron. Mater. 46, 4596–4603 (2017). https://doi.org/10.1007/s11664-017-5445-5

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  • DOI: https://doi.org/10.1007/s11664-017-5445-5

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