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High Temperature Electronic and Thermal Transport Properties of EuGa2−x In x Sb2

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Abstract

The Zintl phase EuGa2Sb2 was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa2Sb2 is comprised of a 3-D network of polyanionic [Ga2Sb2]2− tunnels filled with Eu cations that provide charge balance (Eu2+[Ga2Sb2]2−). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa2−x In x Sb2 (x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (∼0.1 eV) prevents EuGa2Sb2 from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.

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Acknowledgements

This research was performed partially at the Jet Propulsion Laboratory supported by the NASA Science Missions Directorate’s Radioisotope Power System’s Thermoelectric Technology Development project under contract with the NASA. U.A. acknowledges the financial assistance provided by The Scientific and Technological Research Council of Turkey. S.C. and U.A. thank Alexandra Zevalkink for her edits and discussions, Douglas Hofmann for speed of sound measurements, Kurt Star for his input during discussions and Stephanie Reyes, Prastuti Singh, and Eugene Vinitsky for their help finding literature. A.O. thanks Ulrike Nitzsche from IFW Dresden, Germany for technical help in computational work.

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    Authors and Affiliations

    1. Department of Applied Physics and Materials Science, California Institute of Technology, 1200 E California Blvd, Pasadena, CA, 91125, USA

      Sevan Chanakian, Rochelle Weber & Umut Aydemir

    2. Thermal Energy Conversion Technologies Group, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA, 91109, USA

      Sevan Chanakian, Jean-Pierre Fleurial & Sabah Bux

    3. Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA

      Umut Aydemir & G. Jeffrey Snyder

    4. Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany

      Alim Ormeci

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    1. Sevan Chanakian
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    Correspondence to Umut Aydemir.

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    Sevan Chanakian and Rochelle Weber have contributed equally.

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    Chanakian, S., Weber, R., Aydemir, U. et al. High Temperature Electronic and Thermal Transport Properties of EuGa2−x In x Sb2 . J. Electron. Mater. 46, 4798–4804 (2017). https://doi.org/10.1007/s11664-017-5423-y

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