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Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices

Journal of Electronic Materials volume 46, pages 3851–3856 (2017)Cite this article

Abstract

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs.

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Authors and Affiliations

  1. Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil

    V. Orsi Gordo & Y. Galvão Gobato

  2. Departamento de Engenharia Elétrica, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil

    H. V. A. Galeti

  3. Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas-UNICAMP, Campinas, SP, 13083-970, Brazil

    M. J. S. P. Brasil

  4. School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD, UK

    D. Taylor & M. Henini

Authors
  1. V. Orsi Gordo
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  2. Y. Galvão Gobato
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  3. H. V. A. Galeti
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  4. M. J. S. P. Brasil
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  5. D. Taylor
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  6. M. Henini
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Correspondence to Y. Galvão Gobato.

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Orsi Gordo, V., Gobato, Y.G., Galeti, H.V.A. et al. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. J. Electron. Mater. 46, 3851–3856 (2017). https://doi.org/10.1007/s11664-017-5391-2

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  • DOI: https://doi.org/10.1007/s11664-017-5391-2

Keywords

  • Quantum rings
  • photoluminescence
  • spin polarization
  • resonant tunneling