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Memory Switching in Amorphous Se90Te10−x Pb x

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Abstract

The effect of various factors such as temperature, film thickness, and Pb content on the electrical conductivity and switching phenomenon in Se90 Te10−x Pb x films has been examined and is discussed herein. X-ray diffraction analysis and energy-dispersive x-ray spectroscopy were used to confirm the structure and chemical composition of the films, respectively. The variation of the electrical conductivity σ dc with Pb addition was correlated with the nature and strength of the Pb bonds in the SeTe matrix. Current–voltage characteristic curves showed two regions of high and low resistance with negative differential resistances, revealing memory-type switching corresponding to an electrothermal model. The applicability of this model was confirmed using the electrical to switching activation energy ratio, as well as the heat dissipation factor. The mean switching voltage was found to be dependent on temperature, film thickness, and composition. The decrease in the switching voltage with Pb addition is analyzed based on the thermal stability variation.

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Authors and Affiliations

  1. Department of Physics, Faculty of Education, Ain Shams University, Cairo, Egypt

    H. E. Atyia

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Atyia, H.E. Memory Switching in Amorphous Se90Te10−x Pb x . J. Electron. Mater. 46, 2130–2139 (2017). https://doi.org/10.1007/s11664-016-5146-5

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  • DOI: https://doi.org/10.1007/s11664-016-5146-5

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