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Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

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Abstract

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2–2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of ~0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10−6 A/mm (V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

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Authors and Affiliations

  1. Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ, 08873, USA

    Jie Su, Ronald Arif & George D. Papasouliotis

  2. IMEC, Kapeldreef 75, 3001, Louvain, Belgium

    Niels Posthuma, Dirk Wellekens,  Yoga N. Saripalli & Stefaan Decoutere

Authors
  1. Jie Su
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  2. Niels Posthuma
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  3. Dirk Wellekens
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  4. Yoga N. Saripalli
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  5. Stefaan Decoutere
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  6. Ronald Arif
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  7. George D. Papasouliotis
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Correspondence to Jie Su.

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Su, J., Posthuma, N., Wellekens, D. et al. Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates. J. Electron. Mater. 45, 6346–6354 (2016). https://doi.org/10.1007/s11664-016-5029-9

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  • DOI: https://doi.org/10.1007/s11664-016-5029-9

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