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Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2

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Abstract

We report on thin film transistors using continuous WSe2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O2 plasma etching is used to provide precise thickness modification of the WSe2 thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe2 films. P-channel thin film transistors with plasma-thinned 3 nm WSe2 channels have mobility ∼0.01 cm2/Vs and current on–off ratio greater than 104. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.

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Acknowledgements

We acknowledge the support from The Dow Chemical Company and National Science Foundation Emerging Frontiers in Research and Innovation Program 2-DARE (2-Dimensional Atomic-Layer Research and Engineering) Grant (EFRI-1433378).

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Authors and Affiliations

  1. Center for Thin Film Devices and Materials Research Institute, Department of Electrical Engineering, Penn State University, University Park, PA, 16802, USA

    Yiyang Gong & Thomas N. Jackson

  2. Department of Physics, Penn State University, University Park, PA, 16802, USA

    Yiyang Gong

  3. Department of Material Science and Engineering, Penn State University, University Park, PA, 16802, USA

    Xiaotian Zhang & Joan M. Redwing

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  1. Yiyang Gong
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Correspondence to Yiyang Gong.

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Gong, Y., Zhang, X., Redwing, J.M. et al. Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2 . J. Electron. Mater. 45, 6280–6284 (2016). https://doi.org/10.1007/s11664-016-4987-2

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  • DOI: https://doi.org/10.1007/s11664-016-4987-2

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