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Modelling of a Cd1−xZnxTe/ZnTe Single Quantum Well for Laser Diodes

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An Erratum to this article was published on 26 July 2017

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Abstract

In this paper, the carrier density, temperature and quantum well width effect have been investigated for the optical gain for a Cd1−xZnxTe/ZnTe Zinc-blend strained quantum well structure. The device emits laser radiations in green–yellow–orange. Our results showed that the optical gain significantly increases with the increasing of the carrier density. It also increases with the decreasing of the Zn concentration, the well width and the temperature. In addition, the optimal threshold current density values were determined for three alloy compositions as 0.7, 0.8 and 0.9.

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  • 26 July 2017

    An erratum to this article has been published.

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Authors and Affiliations

  1. Faculty of Science, University of Batna and Laboratory of Metallic and Semiconductor Materials (LMSM) University Biskra, Biskra, Algeria

    Sai̇d Dehimi & Lakhdar Dehimi

  2. Research Centre in Industrial Technologies CRTI, P.O. Box 64, 16014 , Cheraga, Algiers, Algeria

    Sai̇d Dehimi

  3. Department of Physics, Faculty of Sciences, Gazi University, 06500, Ankara, Turkey

    Tarik Asar & Süleyman Özçelik

  4. Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

    Tarik Asar & Süleyman Özçelik

Authors
  1. Sai̇d Dehimi
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  2. Lakhdar Dehimi
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  3. Tarik Asar
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  4. Süleyman Özçelik
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Correspondence to Tarik Asar.

Additional information

An erratum to this article is available at https://doi.org/10.1007/s11664-017-5713-4.

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Dehimi, S., Dehimi, L., Asar, T. et al. Modelling of a Cd1−xZnxTe/ZnTe Single Quantum Well for Laser Diodes. J. Electron. Mater. 46, 775–781 (2017). https://doi.org/10.1007/s11664-016-4984-5

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  • DOI: https://doi.org/10.1007/s11664-016-4984-5

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