Effects of K-Doping on Thermoelectric Properties of Bi1−xKxCuOTe
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The effects of K-doping on the thermoelectric properties of Bi1−xKxCuOTe (x = 0 to 0.08) have been investigated. The compounds were synthesized by a one-step solid-state reaction method and consolidated by a spark plasma sintering process. As the amount of K-doping was increased, the electrical and thermal conductivities increased while the Seebeck coefficient decreased due to increasing hole concentration. A ZT value of 0.69 was obtained for the compound K0.01Bi0.99CuOTe at 700 K, to the best of our knowledge the highest value reported for this material system. The origin of this enhanced ZT is discussed in terms of the density of states effective mass estimated by a single parabolic band model and electronic structures calculated based on density functional theory.
KeywordsThermoelectric BiCuOTe K-doping density of states (DOS) effective mass
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- 3.T.M. Tritt, Semiconductors and Semimetals, Recent Trends in Thermoelectric Materials Research: Part One to Three (San Diego: Academic, 2001).Google Scholar
- 4.A.F. Ioffe, Semiconductor Thermoelements, and Thermoelectric Cooling (London: Infosearch, 1957).Google Scholar
- 8.A.F. Ioffe, Semiconductor; Thermoelements and Thermoelectric Cooling (London: Infosearch Limited, 1957).Google Scholar
- 36.H. Brooks, Advances in Electronics and Electron Physics (New York: Academic, 1955).Google Scholar