Journal of Electronic Materials

, Volume 46, Issue 5, pp 2717–2723 | Cite as

Effects of K-Doping on Thermoelectric Properties of Bi1−xKxCuOTe

  • Tae-Ho An
  • Young Soo Lim
  • Won-Seon Seo
  • Cheol-Hee Park
  • Mi Duk Yoo
  • Chan Park
  • Chang Hoon Lee
  • Ji Hoon Shim
Article

Abstract

The effects of K-doping on the thermoelectric properties of Bi1−xKxCuOTe (x = 0 to 0.08) have been investigated. The compounds were synthesized by a one-step solid-state reaction method and consolidated by a spark plasma sintering process. As the amount of K-doping was increased, the electrical and thermal conductivities increased while the Seebeck coefficient decreased due to increasing hole concentration. A ZT value of 0.69 was obtained for the compound K0.01Bi0.99CuOTe at 700 K, to the best of our knowledge the highest value reported for this material system. The origin of this enhanced ZT is discussed in terms of the density of states effective mass estimated by a single parabolic band model and electronic structures calculated based on density functional theory.

Keywords

Thermoelectric BiCuOTe K-doping density of states (DOS) effective mass 

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Copyright information

© The Minerals, Metals & Materials Society 2016

Authors and Affiliations

  • Tae-Ho An
    • 1
  • Young Soo Lim
    • 2
  • Won-Seon Seo
    • 3
  • Cheol-Hee Park
    • 4
  • Mi Duk Yoo
    • 1
  • Chan Park
    • 1
  • Chang Hoon Lee
    • 5
  • Ji Hoon Shim
    • 5
    • 6
  1. 1.Department of Materials Science and EngineeringSeoul National UniversitySeoulRepublic of Korea
  2. 2.Department of Materials System EngineeringPukyong National UniversityBusanRepublic of Korea
  3. 3.Energy and Environmental DivisionKorea Institute of Ceramic Engineering and TechnologyJinjuRepublic of Korea
  4. 4.LG Chem/Research ParkDaejeonRepublic of Korea
  5. 5.Department of ChemistryPohang University of Science and TechnologyPohangRepublic of Korea
  6. 6.Divisions of Advanced Nuclear EngineeringPohang University of Science and TechnologyPohangRepublic of Korea

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