Effects of K-Doping on Thermoelectric Properties of Bi1−x K x CuOTe
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The effects of K-doping on the thermoelectric properties of Bi1−x K x CuOTe (x = 0 to 0.08) have been investigated. The compounds were synthesized by a one-step solid-state reaction method and consolidated by a spark plasma sintering process. As the amount of K-doping was increased, the electrical and thermal conductivities increased while the Seebeck coefficient decreased due to increasing hole concentration. A ZT value of 0.69 was obtained for the compound K0.01Bi0.99CuOTe at 700 K, to the best of our knowledge the highest value reported for this material system. The origin of this enhanced ZT is discussed in terms of the density of states effective mass estimated by a single parabolic band model and electronic structures calculated based on density functional theory.
KeywordsThermoelectric BiCuOTe K-doping density of states (DOS) effective mass
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This research was supported by the Mid-career Researcher Program (2015R1A2A2A01005929) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, Republic of Korea and also by the Power Generation & Electricity Delivery (2011-1020400090) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (MKE).
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