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Structures and Properties of C-Doped NiCr Thin Film Deposited by Closed-Field Unbalanced Magnetron Sputtering

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Abstract

The structures and properties of C-doped NiCr thin film as embedded thin film resistor (ETFR) materials were studied by closed-field, unbalanced magnetron sputtering method. The C-doped NiCr (NiCrC1) thin film had more stable electrical performance, better corrosion resistance, and higher hardness than NiCr thin film. The temperature coefficient of resistance (TCR) of NiCrC1 thin film deposited at room temperature (from 19.73 ppm/K to 173.7 ppm/K) was lower than that of NiCr thin film (from 157.8 ppm/K to 378.9 ppm/K), and the sheet resistor (154.25 Ω/Sq) was higher than that of NiCr thin film (62.84 Ω/Sq). The preferred orientations of C-doped NiCr thin film was Ni (111), while that of NiCr thin film was Ni (011). The carbon-doped NiCr thin film can reduce the defects and stress and change the preferred orientations. The dominant carbon in C-doped NiCr thin film had a graphite-like structure.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Ningbo University of Technology, Ningbo, 315016, People’s Republic of China

    Lifei Lai, Jinxia Wang, Hongtao Wang & Mingdong Bao

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  1. Lifei Lai
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  2. Jinxia Wang
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  3. Hongtao Wang
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  4. Mingdong Bao
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Lai, L., Wang, J., Wang, H. et al. Structures and Properties of C-Doped NiCr Thin Film Deposited by Closed-Field Unbalanced Magnetron Sputtering. J. Electron. Mater. 46, 552–562 (2017). https://doi.org/10.1007/s11664-016-4928-0

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