Journal of Electronic Materials

, Volume 45, Issue 9, pp 4626–4630 | Cite as

Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

  • A. G. U. PereraEmail author
  • Y. F. Lao
  • P. S. Wijewarnasuriya
  • S. S. Krishna


The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III–V and II–VI materials are discussed.


Heterojunction internal photoemission III-V II-VI 


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This work was supported in part by the U.S. Army Research Office under Grant No. W911NF-12-2-0035 monitored by Dr. William W. Clark.


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Copyright information

© The Minerals, Metals & Materials Society 2016

Authors and Affiliations

  • A. G. U. Perera
    • 1
    Email author
  • Y. F. Lao
    • 1
  • P. S. Wijewarnasuriya
    • 2
  • S. S. Krishna
    • 3
  1. 1.Department of Physics and AstronomyGeorgia State UniversityAtlantaUSA
  2. 2.U.S. Army Research LaboratoryAdelphiUSA
  3. 3.Center for High Technology Materials, Department of Electrical and Computer EngineeringUniversity of New Mexico AlbuquerqueUSA

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