Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy
- 118 Downloads
The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III–V and II–VI materials are discussed.
KeywordsHeterojunction internal photoemission III-V II-VI
Unable to display preview. Download preview PDF.
This work was supported in part by the U.S. Army Research Office under Grant No. W911NF-12-2-0035 monitored by Dr. William W. Clark.
- 5.S.M. Sze, and K.K. Ng, Physics of Semiconductor Devices (Wiley, New York, 2007), pp. 176–178Google Scholar
- 10.V.V. Afanas’ev and A. Stesmans, J. Cryst. Growth 102 (8), 081301 (2007)Google Scholar
- 16.E. Plis, S. Krishna, N. Gautam, S. Myers, and S. Krishna, Photonics J. IEEE 3 (2), 234 (2011)Google Scholar
- 17.Y.F. Lao, A.G. Unil Perera, and P.S. Wijewarnasuriya, Appl. Phys. Lett. 104 (13), 131106 (2014)Google Scholar
- 19.S. Adachi, P. Capper, S. Kasap, and A. Willoughby, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors. Wiley Series in Materials for Electronic & Optoelectronic Applications (Burlington, MA: Academic Press, 2009)Google Scholar