Abstract
Cz n-type Si (100) wafers are implanted with 190 keV O and 40 keV H ions in different implantation sequences. Cross sectional transmission electron microscopy and slow positron annihilation spectroscopy are used to study the formation and evolution of micro-defects. Our results clearly show that the defect morphology depends strongly on the implantation sequence. Large cavities are observed in O preimplanted samples, while only platelets are observed in H preimplanted samples. The change regularity of the S parameter is the same for the Si samples co-implanted at different sequences. But in H preimplanted samples, the S parameter is a little higher. The effects of the implantation sequence on the micro-defects have been discussed in combination with H and O implantation-induced defects as well as their interactions upon annealing.
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Acknowledgements
This work is supported by National Natural Science Foundation of China (No. 11275138), Tianjin Application Fundamental and Frontier Technology Research Project (No. 14JCYBJC17100 and No. 15JCYBJC16700) and Scientific Research Foundation of Tianjin University of Technology and Education (No. KYQD11001).
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Wang, Z., Yang, L., Zhang, LZ. et al. Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon. J. Electron. Mater. 45, 5064–5068 (2016). https://doi.org/10.1007/s11664-016-4698-8
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DOI: https://doi.org/10.1007/s11664-016-4698-8