Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices

Abstract

Two hydrogenation techniques were used to passivate defects in InAs/InAsSb superlattices: UV-photon assisted hydrogenation with and without DC bias enhancement. The effects of the hydrogenation on the minority carrier lifetime were studied using photoluminescence and optical modulation response. An increase of the minority carrier lifetime from 1.8 μs to 3.3 μs with hydrogenation using both methods was observed; however, the processing time shortened from 24 h to 90 min when using the DC bias enhancement. The largest increase in carrier lifetime corresponded to a deuterium density of 9 × 1014 atoms/cm2, as measured by nuclear reaction analysis.

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References

  1. 1.

    C.H. Grein and M.E. Flatte, Proceedings of SPIE (2010), pp. 7660-49.

  2. 2.

    W. Tennant and C. Grein, DJ06, Presented at the MSS Joint Session on Materials & Detectors, Orlando, FL (February 2010).

  3. 3.

    B.V. Olson, E.A. Shaner, J.K. Kim, J.F. Klem, S.D. Hawkins, L.M. Murray, J.P. Prineas, M.E. Flatte, and T.F. Boggess, Appl. Phys. Lett. 101, 092109 (2012).

    Article  Google Scholar 

  4. 4.

    D. Donetsky, S.P. Svensson, L.E. Vorobjev, and G. Belenky, Appl. Phys. Lett. 95, 212104 (2009).

    Article  Google Scholar 

  5. 5.

    L. Höglund, D.Z. Ting, A. Khoshakhlagh, A. Soibel, C.J. Hill, A. Fisher, S. Keo, and S.D. Gunapala, Appl. Phys. Lett. 103, 221908 (2013).

    Article  Google Scholar 

  6. 6.

    D.M. Danielsson, J.T. Gudmundsson, and H.G. Svavarsson, Phys. Scripta 01, 141 (2010).

  7. 7.

    W.E. Kunz, Phys. Rev. 97, 456 (1955).

    Article  Google Scholar 

  8. 8.

    T. Ambridge and G. Carter, J. Phys. D: Appl. Phys. 4, 1630 (1971).

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Correspondence to K. Hossain.

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Hossain, K., Höglund, L., Phinney, L.C. et al. Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices. Journal of Elec Materi 45, 5626–5629 (2016). https://doi.org/10.1007/s11664-016-4617-z

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Keywords

  • Hydrogenation
  • strain layer superlattice
  • type-II SLS
  • carrier lifetime
  • defect passivation
  • Ga-free
  • InAs
  • InAsSb