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Enhanced Photodetection from TiO2–SiO x –TiO2 One-Dimensional Device

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Abstract

In this work, TiO2 nanowires (NWs)/SiO x zigzag (ZZ) film/TiO2 NWs structure-based devices were fabricated using glancing angle deposition and oblique angle deposition techniques. An investigation of the optoelectronic properties of the devices will be presented. The NWs–ZZ–NWs structure showed an average of 1.6 times enhancement in absorbance value as compared to the absorbance of the structure that contains only NWs. When irradiated with white light, NWs–ZZ–NWs- and only NWs-based devices exhibited a maximum 6.3 and 2.7 times greater light-to-dark current ratio, respectively, at −3 V. The maximum photoresponsivity and internal gain at the wavelength of 370 nm were calculated to be 57 A/W and 191, respectively, for the NWs–ZZ–NWs devices. The rise and fall time for the NWs–ZZ–NWs and NW devices were 16.56 s and 8.2 s, and 8.39 s and 7.31 s, respectively.

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Acknowledgement

The authors wish to thank the Department of Science and Technology (DST), Government of India, National Institute of Technology (NIT) Agartala, and the National Institute of Technology (NIT) Durgapur for financial support. The authors are also thankful to the Sophisticated Analytical Instrument Facility (SAIF), Indian Institute of Technology (IIT) Bombay, India, for field emission gun-scanning electron microscopy (FEG-SEM) measurements.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania, 799046, India

    Bijit Choudhuri

  2. Department of Physics, National Institute of Technology Durgapur, Durgapur, 713209, India

    Aniruddha Mondal

  3. Department of Electrical Engineering, National Institute of Technology Agartala, Jirania, 799046, India

    Ardhendu Saha

Authors
  1. Bijit Choudhuri
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  2. Aniruddha Mondal
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  3. Ardhendu Saha
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Correspondence to Aniruddha Mondal.

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Choudhuri, B., Mondal, A. & Saha, A. Enhanced Photodetection from TiO2–SiO x –TiO2 One-Dimensional Device. J. Electron. Mater. 45, 4208–4214 (2016). https://doi.org/10.1007/s11664-016-4594-2

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  • DOI: https://doi.org/10.1007/s11664-016-4594-2

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