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Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration

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Abstract

The dark currents of two short wave (SW) HgCdTe infrared focal plane arrays (IRFPA) detectors hybridized with direct injection (DI) readout and capacitance transimpedance amplifier (CTIA) with long time integration were investigated. The cutoff wavelength of the two SW IRFPAs is about 2.6 μm at 84 K. The dark current densities of DI and CTIA samples are approximately 8.0 × 10−12 A/cm2 and 7.2 × 10−10 A/cm2 at 110 K, respectively. The large divergence of the dark current density might arise from the injection efficiency difference of the two readouts. The low injection efficiency of the DI readout, compared with the high injection efficiency of the CTIA readout at low temperature, makes the dark current density of the DI sample much lower than that of the CTIA sample. The experimental value of injection efficiency of the DI sample was evaluated as 1.1% which is consistent with its theoretical value.

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Authors and Affiliations

  1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    P. Y. Song, Z. H. Ye, A. B. Huang, H. L. Chen, X. N. Hu, R. J. Ding & L. He

  2. University of Chinese Academy of Sciences, Beijing, 100039, China

    P. Y. Song

  3. Henan University of Science and Technology, Luoyang, 471023, China

    P. Y. Song

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  1. P. Y. Song
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  2. Z. H. Ye
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  3. A. B. Huang
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  4. H. L. Chen
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  5. X. N. Hu
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  6. R. J. Ding
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  7. L. He
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Correspondence to Z. H. Ye.

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Song, P.Y., Ye, Z.H., Huang, A.B. et al. Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration. J. Electron. Mater. 45, 4711–4715 (2016). https://doi.org/10.1007/s11664-016-4556-8

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  • DOI: https://doi.org/10.1007/s11664-016-4556-8

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