Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
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Buffer-free GeSn and SiGeSn films have been deposited on Si via a cold-wall, ultra-high vacuum chemical vapor deposition reactor using in situ gas mixing of deuterated stannane, silane and germane. Material characterization of the films using x-ray diffraction and transmission electron microscopy shows crystalline growth with an array of misfit dislocation formed at the Si substrate interface. Energy dispersive x-ray maps attained from the samples show uniform incorporation of the elements. The Z-contrast map of the high-angle annular dark-field of the film cross section shows uniform incorporation along the growth as well. Optical characterization of the GeSn films through photoluminescence technique shows reduction in the bandgap edge of the materials.
KeywordsChemical vapor deposition Si photonics GeSn alloy SiGeSn alloy photoluminescence
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The work at the UA was supported by NSF (EPS-1003970), the Arkansas Bioscience Institute, the Arktonics, LLC (Air Force SBIR, FA9550-14-C-0044, Dr. Gernot Pomrenke, Program Manager) and DARPA (W911NF-13-1-0196, Dr. Jay Lewis, Program Manager). Drs. R.A. Soref and G. Sun acknowledge support from AFOSR (FA9550-14-1-0196, Dr. Gernot Pomrenke, Program Manager). The authors would also like to thank Institute for Nano Science and Engineering at the University of Arkansas for material characterization.
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